홈 로직 및 전압 변환 버퍼, 드라이버 및 트랜시버 범용 트랜시버
홈
로직 및 전압 변환
버퍼, 드라이버 및 트랜시버
범용 트랜시버

SN74AUP1G14

활성

슈미트 트리거 입력을 지원하는 단일 0.8V~3.6V 저전력 인버터

지금 주문
데이터시트

SN74AUP1G14

활성
데이터시트 지금 주문

제품 상세 정보

Supply voltage (min) (V) 0.8 Supply voltage (max) (V) 3.6 Number of channels 1 IOL (max) (mA) 4 IOH (max) (mA) -4 Input type Schmitt-Trigger Output type Push-Pull Features Balanced outputs, Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns) Technology family AUP Rating Catalog Operating temperature range (°C) -40 to 85
Supply voltage (min) (V) 0.8 Supply voltage (max) (V) 3.6 Number of channels 1 IOL (max) (mA) 4 IOH (max) (mA) -4 Input type Schmitt-Trigger Output type Push-Pull Features Balanced outputs, Over-voltage tolerant inputs, Partial power down (Ioff), Very high speed (tpd 5-10ns) Technology family AUP Rating Catalog Operating temperature range (°C) -40 to 85
DSBGA (YFP) 4 1 mm² 1 x 1 SOT-23 (DBV) 5 8.12 mm² 2.9 x 2.8 SOT-5X3 (DRL) 5 2.56 mm² 1.6 x 1.6 SOT-SC70 (DCK) 5 4.2 mm² 2 x 2.1 USON (DRY) 6 1.45 mm² 1.45 x 1 X2SON (DPW) 5 0.64 mm² 0.8 x 0.8 X2SON (DSF) 6 1 mm² 1 x 1
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Low Static-Power Consumption
    (ICC = 0.9 µA Maximum)
  • Low Dynamic-Power Consumption
    (Cpd = 4.4 pF Typical at 3.3 V)
  • Low Input Capacitance (CI = 1.5 pF Typical)
  • Low Noise – Overshoot and Undershoot
    <10% of VCC
  • Ioff Supports Partial-Power-Down Mode Operation
  • Includes Schmitt-Trigger Inputs
  • Wide Operating VCC Range of 0.8 V to 3.6 V
  • Optimized for 3.3-V Operation
  • 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
  • tpd = 4.9 ns Maximum at 3.3 V
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Low Static-Power Consumption
    (ICC = 0.9 µA Maximum)
  • Low Dynamic-Power Consumption
    (Cpd = 4.4 pF Typical at 3.3 V)
  • Low Input Capacitance (CI = 1.5 pF Typical)
  • Low Noise – Overshoot and Undershoot
    <10% of VCC
  • Ioff Supports Partial-Power-Down Mode Operation
  • Includes Schmitt-Trigger Inputs
  • Wide Operating VCC Range of 0.8 V to 3.6 V
  • Optimized for 3.3-V Operation
  • 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
  • tpd = 4.9 ns Maximum at 3.3 V

The AUP family is TI’s premier solution to the industry’s low power needs in battery-powered portable applications. This family assures a very low static and dynamic power consumption across the entire VCC range of 0.8 V to 3.6 V, resulting in an increased battery life. This product also maintains excellent signal integrity (see AUP – The Lowest-Power Family and Excellent Signal Integrity).

This device functions as an independent gate with Schmitt-trigger inputs, which allows for slow input transition and better switching-noise immunity at the input.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device.

The AUP family is TI’s premier solution to the industry’s low power needs in battery-powered portable applications. This family assures a very low static and dynamic power consumption across the entire VCC range of 0.8 V to 3.6 V, resulting in an increased battery life. This product also maintains excellent signal integrity (see AUP – The Lowest-Power Family and Excellent Signal Integrity).

This device functions as an independent gate with Schmitt-trigger inputs, which allows for slow input transition and better switching-noise immunity at the input.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs when the device is powered down. This inhibits current backflow into the device which prevents damage to the device.
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관심 가지실만한 유사 제품

open-in-new 대안 비교
비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀
SN74LVC1G04 활성 단일 1.65V~5.5V 인버터 Larger voltage range (1.65V to 5.5V), higher drive average drive strength (24mA)

기술 문서

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모두 보기8
유형 직함 날짜
* Data sheet SN74AUP1G14 Low-Power Single Schmitt-Trigger Inverter datasheet (Rev. J) PDF | HTML 2017/11/02
Application brief Understanding Schmitt Triggers (Rev. A) PDF | HTML 2019/05/22
Selection guide Little Logic Guide 2018 (Rev. G) 2018/07/06
Application note Designing and Manufacturing with TI's X2SON Packages 2017/08/23
Selection guide Logic Guide (Rev. AB) 2017/06/12
White paper Solving CMOS Transition Rate Issues Using Schmitt Trigger Solution (Rev. A) 2017/05/01
Application note How to Select Little Logic (Rev. A) 2016/07/26
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004/07/08

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

5-8-LOGIC-EVM — 5핀~8핀 DCK, DCT, DCU, DRL 및 DBV 패키지용 일반 논리 평가 모듈

5~8핀 수의 DCK, DCT, DCU, DRL 또는 DBV 패키지가 있는 모든 디바이스를 지원하도록 설계된 유연한 EVM.
사용 설명서: PDF
TI.com에서 구매할 수 없습니다
시뮬레이션 모델

HSPICE Model of SN74AUP1G14

SCEJ166.ZIP (87 KB) - HSpice Model
다운로드
시뮬레이션 모델

SN74AUP1G14 Behavioral SPICE Model

SCEM687.ZIP (7 KB) - PSpice Model
다운로드
시뮬레이션 모델

SN74AUP1G14 IBIS Model (Rev. A)

SCEM424A.ZIP (64 KB) - IBIS Model
다운로드
레퍼런스 디자인

TIDA-00377 — MOSFET를 지원하는 자체 전원 AC 고체 상태 릴레이 레퍼런스 디자인

The self-powered AC solid state relay with MOSFETs reference design is a single relay replacement that enables efficient power management for a low-power alternative to standard electromechanical relays in thermostat applications. This SSR reference design is self-powered through the 24V AC power (...)
Design guide: PDF
회로도: PDF
패키지 핀 다운로드
DSBGA (YFP) 4 옵션 보기
SOT-23 (DBV) 5 옵션 보기
SOT-5X3 (DRL) 5 옵션 보기
SOT-SC70 (DCK) 5 옵션 보기
USON (DRY) 6 옵션 보기
X2SON (DPW) 5 옵션 보기
X2SON (DSF) 6 옵션 보기
TI의 평가 항목에 대한 표준 약관이 적용됩니다.

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

지원 및 교육

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포럼 주제 모두 보기(영문)

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