SN74HCT646
- Operating Voltage Range of 4.5 V to 5.5 V
- Low Power Consumption, 80-µA Max ICC
- Typical tpd = 12 ns
- ±6-mA Output Drive at 5 V
- Low Input Current of 1 µA Max
- Inputs Are TTL-Voltage Compatible
- Independent Registers for A and B Buses
- Multiplexed Real-Time and Stored Data
- True Data Paths
- High-Current 3-State Outputs Can Drive Up To 15 LSTTL Loads
The HCT646 devices consist of bus-transceiver circuits with 3-state outputs, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the input bus or from the internal registers. Data on the A or B bus is clocked into the registers on the low-to-high transition of the appropriate clock (CLKAB or CLKBA) input. Figure 1 illustrates the four fundamental bus-management functions that can be performed with the HCT646 devices.
Output-enable (OE)\ and direction-control (DIR) inputs control the transceiver functions. In the transceiver mode, data present at the high-impedance port can be stored in either or both registers.
The select-control (SAB and SBA) inputs can multiplex stored and real-time (transparent mode) data. DIR determines which bus receives data when OE\ is active (low). In the isolation mode (OE\ high), A data can be stored in one register and/or B data can be stored in the other register.
When an output function is disabled, the input function still is enabled and can be used to store data. Only one of the two buses, A or B, can be driven at a time.
To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
관심 가지실만한 유사 제품
비교 대상 장치와 동일한 기능을 지원하는 핀 대 핀
기술 문서
유형 | 직함 | 날짜 | ||
---|---|---|---|---|
* | Data sheet | SN54HCT646, SN74HCT646 datasheet (Rev. C) | 2003/03/18 | |
Application note | Implications of Slow or Floating CMOS Inputs (Rev. E) | 2021/07/26 | ||
Selection guide | Logic Guide (Rev. AB) | 2017/06/12 | ||
Application note | Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) | 2015/12/02 | ||
User guide | LOGIC Pocket Data Book (Rev. B) | 2007/01/16 | ||
Application note | Semiconductor Packing Material Electrostatic Discharge (ESD) Protection | 2004/07/08 | ||
User guide | Signal Switch Data Book (Rev. A) | 2003/11/14 | ||
Application note | TI IBIS File Creation, Validation, and Distribution Processes | 2002/08/29 | ||
Application note | CMOS Power Consumption and CPD Calculation (Rev. B) | 1997/06/01 | ||
Application note | Designing With Logic (Rev. C) | 1997/06/01 | ||
Application note | SN54/74HCT CMOS Logic Family Applications and Restrictions | 1996/05/01 | ||
Application note | Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc | 1996/04/01 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
14-24-LOGIC-EVM — 14핀~24핀 D, DB, DGV, DW, DYY, NS 및 PW 패키지용 로직 제품 일반 평가 모듈
14-24-LOGIC-EVM 평가 모듈(EVM)은 14핀~24핀 D, DW, DB, NS, PW, DYY 또는 DGV 패키지에 있는 모든 로직 장치를 지원하도록 설계되었습니다.
패키지 | 핀 | 다운로드 |
---|---|---|
SOIC (DW) | 24 | 옵션 보기 |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치