DRV8161
- Drives two N-channel MOSFETs in half-bridge configuration
- High-side MOSFET source/drain up to 102V (absolute max)
- 8V (5V DRV8162L) to 20V gate drive power supply
- Integrated bootstrap diode
- 16-level gate drive peak current
- 16mA - 1000mA source current
- 32mA - 2000mA sink current
- Source-sink current ratio 1:1, 1:2, 1:3
- Adjustable PWM dead time insertion 20ns - 400ns
- Robust design for motor phase (SH) switching
- Slew rate 20V/ns
- Negative transient voltage -20V
- 2-A strong gate pull down
- Split gate drive supply inputs for redundant shutdown (DRV8162, DRV8162L)
- Low-offset current sense amplifier (DRV8161)
- Adjustable gain (5, 10, 20, 40 V/V)
- Flexible PWM control interface; 2-pin PWM, and independent PWM mode
- 13-level VDS over current threshold
- Independent shutdown pin (nDRVOFF)
- Gate driver soft shutdown sequence
- Integrated protection features
- GVDD under voltage (GVDDUV)
- Bootstrap under voltage (BST_UV)
- MOSFET over current protection (VDS)
- Shoot through protection
- Thermal shutdown (OTSD)
- Fault condition indicator (nFAULT)
- Supports 3.3V, and 5V Logic Inputs
The DRV816x devices are half-bridge gate drivers capable of driving high-side and low-side N-channel MOSFETs. The gate drive voltages are generated from the GVDD supply pin and the integrated bootstrap circuit is used to drive the high-side FET up to 102V drain. The Smart Gate Drive architecture supports 16-level (48 combination) gate drive peak current up to 1A source and 2A sink, and a built-in timing control of gate drive current. The devices can be used to drive various types of loads including brushless/brushed DC motors, PMSM, stepper motors, SRM, and solenoids.
Internal protection functions are provided for supply undervoltage, FET over-current, and die over temperature. The nFAULT pin indicates fault events detected by the protection features. The nDRVOFF pin initiates power stage shutdown independent from PWM control. The DRV8162 and DRV8162L devices offer split power supply architecture to assist safe torque off (STO) function.
Many device parameters including gate drive current, dead time, PWM control interface, and over current detection are configurable with a few passive components connected to device pins. An integrated low-side current sense amplifier (DRV8161) provides current measurement information back to the controller.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier datasheet | PDF | HTML | 2024年 5月 6日 |
| EVM User's guide | DRV8161 Evaluation Module User's Guide | PDF | HTML | 2024年 4月 26日 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
DRV8161EVM — DRV8161 評估模組
| 封裝 | 引腳 | 下載 |
|---|---|---|
| VSSOP (DGS) | 20 | 檢視選項 |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 資格摘要
- 進行中可靠性監測
- 晶圓廠位置
- 組裝地點