產品詳細資料

Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Transient isolation voltage (VIOTM) (VPK) 4242 Surge isolation voltage (VIOSM) (VPK) 6400 Creepage (min) (mm) 4 Clearance (min) (mm) 4 Interface type Analog output Integrated isolated power Yes Local sensor accuracy (max) 1.5 Sensor gain (mV/°C) 10 Supply current (max) (µA) 12 Supply voltage (min) (V) 2.3 Supply voltage (max) (V) 5.5 Operating temperature range (°C) -40 to 150 Rating Automotive
Isolation rating Basic Withstand isolation voltage (VISO) (Vrms) 3000 Transient isolation voltage (VIOTM) (VPK) 4242 Surge isolation voltage (VIOSM) (VPK) 6400 Creepage (min) (mm) 4 Clearance (min) (mm) 4 Interface type Analog output Integrated isolated power Yes Local sensor accuracy (max) 1.5 Sensor gain (mV/°C) 10 Supply current (max) (µA) 12 Supply voltage (min) (V) 2.3 Supply voltage (max) (V) 5.5 Operating temperature range (°C) -40 to 150 Rating Automotive
SOIC (DFQ) 7 29.4 mm² 4.9 x 6
  • AEC-Q100 qualified with:

    • Temperature grade 0: –40°C to 150°C Ambient Operating Temperature Range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C5
  • Robust integrated isolation barrier:
    • Withstand isolation voltage: 3000 V RMS
    • Isolation working voltage: 500 V RMS
  • Isolation barrier life: > 50 years
  • Temperature sensor accuracy
    • ±0.5°C typical at 25°C
    • ±1.5°C maximum from 0°C to 70°C
    • ±2.0°C maximum from –40°C to +150°C
  • Operating supply range: 2.3 V to 5.5 V
  • Positive slope sensor gain: 10 mV/°C, with 500 mV offset at 0°C
  • Fast thermal response: < 2 seconds
  • Short circuit protected output
  • Low power consumption: 9 µA (typical)
  • DFQ (SOIC-7) package
  • Safety-related certifications (planned):
    • 3-kV RMS isolation for 1 minute per UL 1577
  • AEC-Q100 qualified with:

    • Temperature grade 0: –40°C to 150°C Ambient Operating Temperature Range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C5
  • Robust integrated isolation barrier:
    • Withstand isolation voltage: 3000 V RMS
    • Isolation working voltage: 500 V RMS
  • Isolation barrier life: > 50 years
  • Temperature sensor accuracy
    • ±0.5°C typical at 25°C
    • ±1.5°C maximum from 0°C to 70°C
    • ±2.0°C maximum from –40°C to +150°C
  • Operating supply range: 2.3 V to 5.5 V
  • Positive slope sensor gain: 10 mV/°C, with 500 mV offset at 0°C
  • Fast thermal response: < 2 seconds
  • Short circuit protected output
  • Low power consumption: 9 µA (typical)
  • DFQ (SOIC-7) package
  • Safety-related certifications (planned):
    • 3-kV RMS isolation for 1 minute per UL 1577

The ISOTMP35-Q1 is the industry’s first isolated temperature sensor IC, combining an integrated isolation barrier, up to 3000 V RMS withstand voltage, with an analog temperature sensor featuring a 10 mV/°C slope from –40°C to +150°C. This integration enables the sensor to be co-located with high voltage heat source (for example: HV FETs, IGBTs, or HV contactors) without requiring expensive isolation circuitry. The direct contact with the high-voltage heat source also provides greater accuracy and faster thermal response compared approaches where the sensor is placed further away to meet isolation requirements.

Operating from a non-isolated 2.3-V to 5.5-V supply, the ISOTMP35-Q1 allows easy integration into applications where sub-regulated power is not available on the high-voltage plane.

The integrated isolation barrier satisfies UL 1577 requirements. The surface mount package (7-pin SOIC) provides excellent heat flow from the heat source to the embedded thermal sensor, minimizing thermal mass and providing more accurate heat-source measurement. This reduces the need for time-consuming thermal modeling and improves system design margin by reducing mechanical variations due to manufacturing and assembly.

The ISOTMP35-Q1 class-AB output driver provides a strong 500-µA maximum output to drive capacitive loads up to 1000 pF and is designed to directly interface with analog-to-digital converter (ADC) sample and hold inputs.

The ISOTMP35-Q1 is the industry’s first isolated temperature sensor IC, combining an integrated isolation barrier, up to 3000 V RMS withstand voltage, with an analog temperature sensor featuring a 10 mV/°C slope from –40°C to +150°C. This integration enables the sensor to be co-located with high voltage heat source (for example: HV FETs, IGBTs, or HV contactors) without requiring expensive isolation circuitry. The direct contact with the high-voltage heat source also provides greater accuracy and faster thermal response compared approaches where the sensor is placed further away to meet isolation requirements.

Operating from a non-isolated 2.3-V to 5.5-V supply, the ISOTMP35-Q1 allows easy integration into applications where sub-regulated power is not available on the high-voltage plane.

The integrated isolation barrier satisfies UL 1577 requirements. The surface mount package (7-pin SOIC) provides excellent heat flow from the heat source to the embedded thermal sensor, minimizing thermal mass and providing more accurate heat-source measurement. This reduces the need for time-consuming thermal modeling and improves system design margin by reducing mechanical variations due to manufacturing and assembly.

The ISOTMP35-Q1 class-AB output driver provides a strong 500-µA maximum output to drive capacitive loads up to 1000 pF and is designed to directly interface with analog-to-digital converter (ADC) sample and hold inputs.

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* Data sheet ISOTMP35-Q1Automotive ±1.5°C, 3-kVRMSIsolated Temperature Sensor with Analog Output with < 2 Seconds Response Time and 500 VRMSWorking Voltage datasheet PDF | HTML 2023年 10月 10日
EVM User's guide ISOTMP35B Evaluation Module User's Guide PDF | HTML 2023年 8月 29日
Circuit design Driving a SAR ADC directly without a front-end buffer circuit (Rev. A) 2019年 3月 6日
Circuit design Circuit for driving an ADC with an instrumentation amplifier in high gain 2018年 10月 4日

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