LM2103

現行

具有 8-V UVLO、失效時間及反相輸入針腳的 107-A、0.5-A/0.8-A 半橋閘極驅動器。

產品詳細資料

Bootstrap supply voltage (max) (V) 107 Power switch IGBT, MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 18 Peak output current (A) 0.65 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Fall time (ns) 18 Iq (mA) 0.0333 Input threshold CMOS, TTL Channel input logic Inverting, Noninverting Switch node voltage (V) -1 Features Dead time control Driver configuration Single input
Bootstrap supply voltage (max) (V) 107 Power switch IGBT, MOSFET Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 18 Peak output current (A) 0.65 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 8 Rating Catalog Fall time (ns) 18 Iq (mA) 0.0333 Input threshold CMOS, TTL Channel input logic Inverting, Noninverting Switch node voltage (V) -1 Features Dead time control Driver configuration Single input
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Drives two N-channel MOSFETs in half-bridge configuration
  • 8-V typical undervoltage lockout on GVDD
  • 107-V absolute maximum voltage on BST
  • –19.5-V absolute maximum negative transient voltage handling on SH
  • 0.5-A/0.8-A peak source/sink currents
  • 475-ns typical fixed internal dead-time
  • Built-in cross conduction prevention
  • 115-ns typical propagation delay
  • Inverting input pin INL
  • Drives two N-channel MOSFETs in half-bridge configuration
  • 8-V typical undervoltage lockout on GVDD
  • 107-V absolute maximum voltage on BST
  • –19.5-V absolute maximum negative transient voltage handling on SH
  • 0.5-A/0.8-A peak source/sink currents
  • 475-ns typical fixed internal dead-time
  • Built-in cross conduction prevention
  • 115-ns typical propagation delay
  • Inverting input pin INL

The LM2103 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The INL inverting input allows the driver to be used in either dual or single PWM input applications.

The fixed dead-time and the –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The LM2103 is available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down.

The LM2103 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The INL inverting input allows the driver to be used in either dual or single PWM input applications.

The fixed dead-time and the –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The LM2103 is available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down.

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最新 LM2104 現行 具有 8-V UVLO、失效時間與關機的 107-V、0.5-A/0.8-A 半橋閘極驅動器 Alternative pinout with shutdown pin

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* Data sheet LM2103 107-V, 0.5-A/0.8-A Half-Bridge Driver with 8-V UVLO, Dead Time, and Inverting Input datasheet (Rev. A) PDF | HTML 2023年 8月 9日
Application note How to Choose a Gate Driver for DC Motor Drives PDF | HTML 2023年 10月 5日

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LM2105EVM — 具有整合式自舉二極體且適用於 105-V 半橋驅動器的 LM2105 評估模組

LM2105 評估模組 (EVM) 是用於評估 LM2105 性能的平台。LM2105 是一款具有 0.5-A 峰值源極和 0.8-A 汲極電流的 105-V、開機電壓、高壓側、低壓側驅動器,適用於驅動兩個 N 通道金屬氧化半導體場效電晶體 (MOSFET)。相同的電路板可用於評估支援封裝中的針腳對針腳相容零件。

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