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LM2105

現行

具有 5-V UVLO 與整合式舉二極體的 107-V 0.5-A/0.8-A 半橋閘極驅動器

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產品規格表

LM2105

現行
產品規格表 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 107 Power switch IGBT, MOSFET Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 18 Peak output current (A) 0.65 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 5 Rating Catalog Propagation delay time (µs) 0.125 Rise time (ns) 28 Fall time (ns) 18 Iq (mA) 0.0333 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -1 Features Integrated bootstrap diode Driver configuration Dual inputs
Bootstrap supply voltage (max) (V) 107 Power switch IGBT, MOSFET Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 18 Peak output current (A) 0.65 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 5 Rating Catalog Propagation delay time (µs) 0.125 Rise time (ns) 28 Fall time (ns) 18 Iq (mA) 0.0333 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -1 Features Integrated bootstrap diode Driver configuration Dual inputs
SOIC (D) 8 29.4 mm² 4.9 x 6 WSON (DSG) 8 4 mm² 2 x 2
  • Drives two N-channel MOSFETs in half-bridge configuration
  • Integrated bootstrap diode
  • 5-V typical undervoltage lockout on GVDD
  • 107-V absolute maximum voltage on BST
  • –19.5-V absolute maximum negative transient voltage handling on SH
  • 0.5-A/0.8-A peak source/sink currents
  • 115-ns typical propagation delay
  • Drives two N-channel MOSFETs in half-bridge configuration
  • Integrated bootstrap diode
  • 5-V typical undervoltage lockout on GVDD
  • 107-V absolute maximum voltage on BST
  • –19.5-V absolute maximum negative transient voltage handling on SH
  • 0.5-A/0.8-A peak source/sink currents
  • 115-ns typical propagation delay

The LM2105 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The integrated bootstrap diode saves board space and reduces system cost by eliminating the need for an external discrete diode.

The –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The small, thermally-enhanced 8-pin WSON package improves PCB layout by allowing the driver to be placed closer to the motor phases. The LM2105 is also available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down.

The LM2105 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The integrated bootstrap diode saves board space and reduces system cost by eliminating the need for an external discrete diode.

The –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The small, thermally-enhanced 8-pin WSON package improves PCB layout by allowing the driver to be placed closer to the motor phases. The LM2105 is also available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down.
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類型 標題 日期
* Data sheet LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode datasheet (Rev. C) PDF | HTML 2023年 9月 9日
Application note How to Choose a Gate Driver for DC Motor Drives PDF | HTML 2023年 10月 5日
EVM User's guide LM2105EVM User's Guide PDF | HTML 2023年 2月 14日
Certificate LM2105EVM EU RoHS Declaration of Conformity (DoC) 2023年 2月 1日

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開發板

LM2105EVM — 具有整合式自舉二極體且適用於 105-V 半橋驅動器的 LM2105 評估模組

LM2105 評估模組 (EVM) 是用於評估 LM2105 性能的平台。LM2105 是一款具有 0.5-A 峰值源極和 0.8-A 汲極電流的 105-V、開機電壓、高壓側、低壓側驅動器，適用於驅動兩個 N 通道金屬氧化半導體場效電晶體 (MOSFET)。相同的電路板可用於評估支援封裝中的針腳對針腳相容零件。

使用指南: PDF | HTML
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