LM5109B-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results
- Device Temperature Grade 1
- Device HBM ESD Classification Level 1C
- Device CDM ESD Classification Level C4A
- Drives Both a High-Side and Low-Side N-Channel
MOSFET - 1-A Peak Output Current (1.0-A Sink/1.0-A
Source) - Independent TTL/CMOS Compatible Inputs
- Bootstrap Supply Voltage to 108-V DC
- Fast Propagation Times (30 ns Typical)
- Drives 1000-pF Load with 15-ns Rise and Fall
Times - Excellent Propagation Delay Matching (2 ns
Typical) - Supply Rail Under-Voltage Lockout
- Low Power Consumption
- Thermally-Enhanced WSON-8 Package
The LM5109B-Q1 is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with TTL/CMOS compatible logic input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the thermally enhanced WSON(8) packages.
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver datasheet (Rev. A) | PDF | HTML | 2015年 12月 8日 |
Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020年 2月 28日 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020年 2月 28日 | ||
More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018年 10月 29日 |
設計與開發
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PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
封裝 | 引腳 | 下載 |
---|---|---|
WSON (NGT) | 8 | 檢視選項 |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 資格摘要
- 進行中可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。