首頁 電源管理 閘極驅動器 半橋式驅動器
首頁
電源管理
閘極驅動器
半橋式驅動器

LM5113

不推薦在新設計中採用

適用於 GaNFET 的 1.2A/5A、90V 半橋閘極驅動器

立即訂購
產品規格表
LM5113 不建議用於新設計
儘管為了支援以前的設計而繼續生產此項產品，但我們並不建議用在新設計上。考量下列其中一項替代產品：
open-in-new 比較替代產品
具備升級功能，可直接投入使用替代所比較的產品
LM5113-Q1 現行 適用 GaNFET 的車用 1.2-A/5-A, 100-V 半橋閘極驅動器 Automotive qualified

LM5113

不推薦在新設計中採用
產品規格表 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 107 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Dual, Independent
Bootstrap supply voltage (max) (V) 107 Power switch GaNFET, MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 5.5 Peak output current (A) 5 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 4 Rating Catalog Propagation delay time (µs) 0.03 Rise time (ns) 7 Fall time (ns) 3.5 Iq (mA) 0.15 Input threshold TTL Channel input logic TTL Switch node voltage (V) -5 Features Bootstrap supply voltage clamp, Split outputs on high and low side Driver configuration Dual, Independent
DSBGA (YFX) 12 3.24 mm² 1.8 x 1.8 WSON (DPR) 10 16 mm² 4 x 4
  • Independent high-side and low-side
    TTL logic inputs
  • 1.2 A / 5 A peak source/sink current
  • High-side floating bias voltage rail
    Operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable
    turnon/turnoff strength
  • 0.6-Ω / 2.1-Ω pulldown/pullup resistance
  • Fast propagation times (28 ns typical)
  • Excellent propagation delay matching
    (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption
  • Independent high-side and low-side
    TTL logic inputs
  • 1.2 A / 5 A peak source/sink current
  • High-side floating bias voltage rail
    Operates up to 100 VDC
  • Internal bootstrap supply voltage clamping
  • Split outputs for adjustable
    turnon/turnoff strength
  • 0.6-Ω / 2.1-Ω pulldown/pullup resistance
  • Fast propagation times (28 ns typical)
  • Excellent propagation delay matching
    (1.5 ns typical)
  • Supply rail undervoltage lockout
  • Low power consumption

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113 and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more robust solution.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

The LMG1205 is an enhancement over the LM5113. The LMG1205 takes the design of the LM5113 and includes start-up logic, level shifter, and power-off Vgs clamp enhancements to provide a more robust solution.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.
open-in-new 尋找其它 半橋式驅動器
下載 觀看有字幕稿的影片 影片

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件，然後再試一次。
檢視所有 12
類型 標題 日期
* Data sheet LM5113 80-V, 1.2-A, 5-A, Half Bridge GaN Driver datasheet (Rev. I) PDF | HTML 2019年 10月 28日
EVM User's guide AN-2149 LM5113 Evaluation Board User's Guide (Rev. B) PDF | HTML 2024年 3月 27日
Application brief Key Parameters and Driving Requirements of GaN FETs PDF | HTML 2022年 8月 4日
Application brief Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 2022年 8月 4日
Application brief How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 2022年 8月 2日
Selection guide Power Management Guide 2018 (Rev. R) 2018年 6月 25日
Application note Design Considerations for LMG1205 Advanced GaN FET Driver During High-Frequency (Rev. A) 2018年 5月 30日
Technical article Create a power supply for an MRI application PDF | HTML 2017年 8月 14日
White paper A comprehensive methodology to qualify the reliability of GaN products 2015年 3月 2日
White paper GaN power module performance advantage in DC/DC converters 2015年 3月 2日
White paper Advancing Power Supply Solutions Through the Promise of GaN 2015年 2月 24日
More literature LM5113 Prod Brief - 5A, 100V Half-Brdge Gate Drvr for Enhancement-Mode GaN FETs 2011年 6月 17日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

模擬型號

LM5113 PSpice Transient Model (Rev. D)

SNVM043D.ZIP (43 KB) - PSpice Model
下載
模擬型號

LM5113 TINA-TI Transient Reference Design (Rev. A)

SNVM460A.TSC (613 KB) - TINA-TI Reference Design
下載
模擬型號

LM5113 TINA-TI Transient Spice Model (Rev. A)

SNVM459A.ZIP (16 KB) - TINA-TI Spice Model
下載
模擬型號

LM5113 Unencrypted Spice Transient Model (Rev. B)

SNVJ002B.ZIP (2 KB) - PSpice Model
下載
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
要求
參考設計

PMP4486 — 具有 3 路輸出的 48V 輸入電壓數位 POL 參考設計

The PMP4486 is a GaN-based reference design solution for telecom and computing applications. The GaN module LMG5200 enables a high efficiency single stage conversion with an input range from 36 to 60V down to 29V, 12V and 1.0V. This design shows the benefits of a GaN based design with high (...)
Test report: PDF
電路圖: PDF
參考設計

PMP4435 — 具有 GaN FET 的 48V 輸入、300W 1/8brick 數位模組參考設計

The PMP4435 is a DC-DC isolated digital module with GaN mosfet reference design targeted for industrial and telecom applications. The DC input range is 36V-60V, with 12V typical and the output is 12V/5A. An digital controller UCD3138A is used in the design. The efficiency is up to 95.8% with good (...)
Test report: PDF
電路圖: PDF
封裝 引腳 下載
DSBGA (YFX) 12 檢視選項
WSON (DPR) 10 檢視選項
適用 TI 的評估品項標準條款與條件。

訂購與品質

內含資訊：
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 資格摘要
  • 進行中可靠性監測
內含資訊：
  • 晶圓廠位置
  • 組裝地點

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

以英文檢視所有論壇主題

內容係由 TI 和社群貢獻者依「現狀」提供，且不構成 TI 規範。檢視使用條款。

若有關於品質、封裝或訂購 TI 產品的問題，請參閱 TI 支援。​​​​​​​​​​​​​​

影片