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理想二極體/ORing 控制器

LM74701-Q1

現行

具有整合式 VDS 箝位的車用 3.2-V 至 65-V 反向電池保護理想二極體控制器

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產品規格表

LM74701-Q1

現行
產品規格表 立即訂購

產品詳細資料

Vin (min) (V) 3.2 Vin (max) (V) 65 Number of channels 1 Features Automotive load dump compatibility, Enable, Integrated VDS clamp, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.08 Iq (max) (mA) 0.13 TI functional safety category Functional Safety-Capable FET External single FET IGate source (typ) (µA) 11000 IGate pulsed (typ) (A) 2.3 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -11 Rating Automotive Imax (A) 250 Shutdown current (ISD) (mA) (A) 0.001 Device type Ideal diode controller Product type Ideal diode controller
Vin (min) (V) 3.2 Vin (max) (V) 65 Number of channels 1 Features Automotive load dump compatibility, Enable, Integrated VDS clamp, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.08 Iq (max) (mA) 0.13 TI functional safety category Functional Safety-Capable FET External single FET IGate source (typ) (µA) 11000 IGate pulsed (typ) (A) 2.3 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -11 Rating Automotive Imax (A) 250 Shutdown current (ISD) (mA) (A) 0.001 Device type Ideal diode controller Product type Ideal diode controller
SOT-23-THN (DDF) 8 8.12 mm² 2.9 x 2.8
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V startup)
  • –33-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20 mV ANODE to CATHODE forward voltage drop regulation
  • 1-µA shutdown current (EN = Low)
  • 80-µA operating quiescent current (EN = High)
  • 2-A peak gate turn-off current
  • Fast response to reverse current blocking: < 0.75 µs
  • Integrated battery voltage monitoring switch (SW)
  • Meets automotive ISO7637 transient requirements without additional input TVS diode (TVS less)
  • 8-Pin SOT-23 package 2.90 mm × 1.60 mm
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V startup)
  • –33-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20 mV ANODE to CATHODE forward voltage drop regulation
  • 1-µA shutdown current (EN = Low)
  • 80-µA operating quiescent current (EN = High)
  • 2-A peak gate turn-off current
  • Fast response to reverse current blocking: < 0.75 µs
  • Integrated battery voltage monitoring switch (SW)
  • Meets automotive ISO7637 transient requirements without additional input TVS diode (TVS less)
  • 8-Pin SOT-23 package 2.90 mm × 1.60 mm

The LM74701-Q1 is an automotive AEC Q100 qualified ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode for low loss reverse polarity protection with a 20-mV forward voltage drop. LM74701-Q1 is suitable for input protection of 12-V automotive systems. The 3.2-V input voltage support is particularly well suited for severe cold crank requirements in automotive systems.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device suitable for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions. The LM74701-Q1 has a unique integrated VDS clamp feature which enables users to achieve TVS less input polarity protection solution and save on average a typical 60% of PCB space in constrained automotive systems.

The LM74701-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. With the enable pin low, the controller is off and draws approximately 1 µA of current.

The LM74701-Q1 is an automotive AEC Q100 qualified ideal diode controller which operates in conjunction with an external N-channel MOSFET as an ideal diode for low loss reverse polarity protection with a 20-mV forward voltage drop. LM74701-Q1 is suitable for input protection of 12-V automotive systems. The 3.2-V input voltage support is particularly well suited for severe cold crank requirements in automotive systems.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device suitable for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions. The LM74701-Q1 has a unique integrated VDS clamp feature which enables users to achieve TVS less input polarity protection solution and save on average a typical 60% of PCB space in constrained automotive systems.

The LM74701-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. With the enable pin low, the controller is off and draws approximately 1 µA of current.
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LM74721-Q1 現行 車用、無 TVS 低 IQ 反向電池保護理想二極體控制器、主動式整流 Ideal diode controller with ultra-low on IQ.

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類型 標題 日期
* Data sheet LM74701-Q1 TVS Less Automotive Reverse Battery Protection Ideal Diode Controller datasheet (Rev. A) PDF | HTML 2021年 12月 14日
Functional safety information LM74701-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA PDF | HTML 2024年 1月 24日
Analog Design Journal Going TVS-less in Automotive Reverse Battery Protection Designs PDF | HTML 2021年 11月 18日
User guide LM74701-Q1EVM User's Guide (Rev. A) PDF | HTML 2021年 9月 8日

設計與開發

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開發板

LM74701Q1EVM — LM74701-Q1 評估模組，適用於具有整合式 VDS 箝位的理想二極體控制器

LM74701-Q1 評估模組 (LM74701Q1EVM) 可協助設計人員評估具有整合 VDS 箝位的 LM74701-Q1 理想二極體控制器的運作和性能。此評估模組示範如何使用 N 通道電源 MOSFET，以低 IQ LM74701-Q1 控制器實現輸入反向電壓保護

使用指南: PDF | HTML
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模擬型號

LM74701-Q1 PSpice Transient Model

SNOM717.ZIP (107 KB) - PSpice Model
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模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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參考設計

TIDA-010253 — Battery control unit reference design for energy storage systems

This reference design is a central controller for a high-voltage Lithium-ion (Li-ion), lithium iron phosphate (LiFePO4) battery rack. This design provides driving circuits for high-voltage relay, communication interfaces, (including RS-485, controller area network (CAN), daisy chain, and Ethernet), (...)
Design guide: PDF
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SOT-23-THN (DDF) 8 檢視選項
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