ONET8541T

現行

具 RSSI 的 9-GHz、4-kΩ 轉阻放大器

產品詳細資料

Type Transimpedance and limiting amplifier Data rate (max) (Mbps) 11300 Supply current (typ) (µA) 27000 Supply current (max) (µA) 40000 Deterministic jitter (typ) (ps) 6 Operating temperature range (°C) -40 to 100
Type Transimpedance and limiting amplifier Data rate (max) (Mbps) 11300 Supply current (typ) (µA) 27000 Supply current (max) (µA) 40000 Deterministic jitter (typ) (ps) 6 Operating temperature range (°C) -40 to 100
DIESALE (Y) See data sheet WAFERSALE (YS) See data sheet
  • 9 GHz Bandwidth
  • 4 kΩ Differential Small Signal Transimpedance
  • -20dBm Sensitivity
  • 0.95 µARMS Input Referred Noise
  • 2.5 mAPP Input Overload Current
  • Received Signal Strength Indication (RSSI)
  • 90 mW Typical Power Dissipation
  • CML Data Outputs with On-Chip 50Ω Back-Termination
  • On Chip Supply Filter Capacitor
  • Single 3.3 V Supply
  • Die Size: 870 µm × 1036 µm
  • 9 GHz Bandwidth
  • 4 kΩ Differential Small Signal Transimpedance
  • -20dBm Sensitivity
  • 0.95 µARMS Input Referred Noise
  • 2.5 mAPP Input Overload Current
  • Received Signal Strength Indication (RSSI)
  • 90 mW Typical Power Dissipation
  • CML Data Outputs with On-Chip 50Ω Back-Termination
  • On Chip Supply Filter Capacitor
  • Single 3.3 V Supply
  • Die Size: 870 µm × 1036 µm

The ONET8541T is a high-speed, high gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3Gbps. It features low input referred noise, 9GHz bandwidth, 4kΩ small signal transimpedance, and a received signal strength indicator (RSSI).

The ONET8541T is available in die form, includes an on-chip VCC bypass capacitor and is optimized for packaging in a TO can.

The ONET8541T requires a single 3.3V ±10% supply and its power efficient design typically dissipates less than 90mW. The device is characterized for operation from –40°C to 100°C case (IC back side) temperature.

The ONET8541T is a high-speed, high gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3Gbps. It features low input referred noise, 9GHz bandwidth, 4kΩ small signal transimpedance, and a received signal strength indicator (RSSI).

The ONET8541T is available in die form, includes an on-chip VCC bypass capacitor and is optimized for packaging in a TO can.

The ONET8541T requires a single 3.3V ±10% supply and its power efficient design typically dissipates less than 90mW. The device is characterized for operation from –40°C to 100°C case (IC back side) temperature.

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類型 標題 日期
* Data sheet 11.3 Gbps Limiting Transimpedance Amplifier with RSSI . datasheet (Rev. A) 2011年 8月 18日

設計與開發

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模擬型號

ONET8541T S-Parameter Model (Rev. A)

SLLM154A.ZIP (99 KB) - S-Parameter Model
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DIESALE (Y)
WAFERSALE (YS)

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