ONET8551T
- 9-GHz Bandwidth
- 10-kΩ Differential Small Signal
Transimpedance - –20-dBm Sensitivity
- 0.9-µARMS Input Referred Noise
- 2.5-mAp-p Input Overload Current
- Received Signal Strength Indication
(RSSI) - 92-mW Typical Power Dissipation
- CML Data Outputs With On-Chip
50-Ω Back-Termination - On Chip Supply Filter Capacitor
- Single +3.3-V Supply
- Die Size: 870 µm x 1036 µm
The ONET8551T device is a high-speed, high-gain, limiting transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features low-input referred noise, 9-GHz bandwidth, 10-kΩ small signal transimpedance, and a received signal strength indicator (RSSI.
The ONET8551T device is available in die form, includes an on-chip VCC bypass capacitor, and is optimized for packaging in a TO can.
The ONET8551T device requires a single +3.3-V supply. The power-efficient design typically dissipates less than 95 mW. The device is characterized for operation from –40°C to 100°C case (IC back-side) temperature.
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檢視所有 1 | 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | 11.3 Gbps Limiting Transimpedance Amplifier With RSSI, ONET8551T datasheet | 2013年 10月 24日 |
設計與開發
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參考設計
TIDA-00088 — 適用於 TI ONET 零件的完整參考設計，採用相容於 10G SFP+ LR 光學模組的形狀
| 封裝 | 引腳 | 下載 |
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| WAFERSALE (YS) | — |
訂購與品質
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- 材料內容
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內含資訊：
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