首頁 電源管理 閘極驅動器 半橋式驅動器
首頁
電源管理
閘極驅動器
半橋式驅動器
最新

TPS7H6003-SP

現行

抗輻射、QMLV 200-V 半橋 GaN 閘極驅動器

立即訂購
產品規格表

TPS7H6003-SP

現行
產品規格表 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 200 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 200 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
CFP (HBX) 48 141.9552 mm² 16.74 x 8.48
  • Radiation Performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching
  • Radiation Performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching

The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating). The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x3-SP drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x3-SP drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.

The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating). The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x3-SP drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x3-SP drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.
open-in-new 尋找其它 半橋式驅動器
下載 觀看有字幕稿的影片 影片

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件，然後再試一次。
檢視所有 16
類型 標題 日期
* Data sheet TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers datasheet (Rev. C) PDF | HTML 2024年 4月 17日
* SMD TPS7H6003-SP SMD 5962-22201 2023年 12月 21日
* Radiation & reliability report TPS7H6003-SP Neutron Displacement Damage (NDD) Characterization Report PDF | HTML 2023年 11月 30日
* Radiation & reliability report TPS7H6003-SP Total Ionizing Dose (TID) Radiation Report PDF | HTML 2023年 11月 30日
* Radiation & reliability report TPS7H6003-SP Single-Event Effects (SEE) Report PDF | HTML 2023年 11月 10日
EVM User's guide TPS7H6003EVM-CVAL Evaluation Module User's Guide (Rev. A) PDF | HTML 2024年 2月 20日
Technical article How can you optimize SWaP for next-generation satellites with electronic power systems? PDF | HTML 2024年 1月 2日
More literature TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. A) 2023年 8月 31日
Application note QML flow, its importance, and obtaining lot information (Rev. C) 2023年 8月 30日
Certificate TPS7H6003EVM-CVAL EU Declaration of Conformity (DoC) 2023年 6月 29日
Application note Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. A) PDF | HTML 2022年 11月 17日
Application note Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 2022年 10月 19日
Selection guide TI Space Products (Rev. I) 2022年 3月 3日
Application note DLA Standard Microcircuit Drawings (SMD) and JAN Part Numbers Primer 2020年 8月 21日
Application note Hermetic Package Reflow Profiles, Termination Finishes, and Lead Trim and Form PDF | HTML 2020年 5月 18日
E-book Radiation Handbook for Electronics (Rev. A) 2019年 5月 21日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

TPS7H6003EVM-CVAL — 適用於 200-V、1.5-A 和 3-A、GaN FET 半橋驅動器的 TPS7H6003 評估模組

TPS7H6003 評估模組接受高達 150-V 輸入，並允許透過驅動 EPC2307 零件測試 TPS7H6003-SP 的可靠性。依預設，評估模組設定為在 PWM 模式下搭配 TPS7H6003-SP 裝置共同執行，該模式接受一個切換訊號的輸入，並在內部產生互補訊號。

使用指南: PDF | HTML
TI.com 無法提供
模擬型號

TPS7H60x3-SP PSpice Transient Model

SNOM790.ZIP (46 KB) - PSpice Model
下載
模擬型號

TPS7H60x3-SP SIMPLIS Model

SNOM781.ZIP (22 KB) - SIMPLIS Model
下載
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
要求
參考設計

PMP23200 — 適用於 100kRad 應用的 100W、5V 輸出硬開關全橋式轉換器參考設計

此參考設計採用 TPS7H5001-SP 脈衝寬度調變 (PWM) 控制器和三個 TPS7H6003-SP 半橋驅動器，用以一個硬開關全橋轉換器，該轉換器的輸入範圍為 22V 至 36V，並產生一個隔離式 5V 輸出，負載功率為 100W。控制器、驅動器和功率 FET 的選擇滿足地球靜止軌道 (GEO) 級輻射性能。相較於傳統二極體整流器，次級同步整流器可提升效率並改善了熱性能。
Test report: PDF
封裝 引腳 下載
CFP (HBX) 48 檢視選項
適用 TI 的評估品項標準條款與條件。

訂購與品質

內含資訊：
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 資格摘要
  • 進行中可靠性監測
內含資訊：
  • 晶圓廠位置
  • 組裝地點

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

以英文檢視所有論壇主題

內容係由 TI 和社群貢獻者依「現狀」提供，且不構成 TI 規範。檢視使用條款。

若有關於品質、封裝或訂購 TI 產品的問題，請參閱 TI 支援。​​​​​​​​​​​​​​

影片