產品詳細資料

Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 1.8, 2.5, 3.3, 5 Protocols Analog Ron (typ) (Ω) 0.5 CON (typ) (pF) 55 ON-state leakage current (max) (µA) 0.15 Supply current (typ) (µA) 0.001 Bandwidth (MHz) 100 Operating temperature range (°C) -40 to 85 Features Make-before-break, Powered-off protection Input/output continuous current (max) (mA) 200 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 1.8, 2.5, 3.3, 5 Protocols Analog Ron (typ) (Ω) 0.5 CON (typ) (pF) 55 ON-state leakage current (max) (µA) 0.15 Supply current (typ) (µA) 0.001 Bandwidth (MHz) 100 Operating temperature range (°C) -40 to 85 Features Make-before-break, Powered-off protection Input/output continuous current (max) (mA) 200 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
VSSOP (DGS) 10 14.7 mm² 3 x 4.9
  • Specified Make-Before-Break Switching
  • Low ON-State Resistance (1 )
  • Control Inputs Are 5.5-V Tolerant
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • 1.65-V to 5.5-V Single-Supply Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • APPLICATIONS
    • Cell Phones
    • PDAs
    • Portable Instrumentation
    • Audio and Video Signal Routing
    • Low-Voltage Data Acquisition Systems
    • Communication Circuits
    • Modems
    • Hard Drives
    • Computer Peripherals
    • Wireless Terminals and Peripherals

  • Specified Make-Before-Break Switching
  • Low ON-State Resistance (1 )
  • Control Inputs Are 5.5-V Tolerant
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • 1.65-V to 5.5-V Single-Supply Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • APPLICATIONS
    • Cell Phones
    • PDAs
    • Portable Instrumentation
    • Audio and Video Signal Routing
    • Low-Voltage Data Acquisition Systems
    • Communication Circuits
    • Modems
    • Hard Drives
    • Computer Peripherals
    • Wireless Terminals and Peripherals

The TS5A23160 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to 5.5 V. The device offers a low ON-state resistance and an excellent channel-to-channel ON-state resistance matching. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable audio applications.

The TS5A23160 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to 5.5 V. The device offers a low ON-state resistance and an excellent channel-to-channel ON-state resistance matching. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable audio applications.

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類型 標題 日期
* Data sheet TS5A23160 datasheet (Rev. A) 2006年 2月 14日
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022年 6月 2日
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021年 12月 1日
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 2021年 1月 6日
Application note Preventing Excess Power Consumption on Analog Switches 2008年 7月 3日
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日

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