UC3611

現行

具有 3-A 尖峰正向電流的四路蕭特基二極體陣列

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PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • Matched, Four-Diode Monolithic Array
  • High Peak Current
  • Low-Cost MINIDIP Package
  • Low-Forward Voltage
  • Parallelable for Lower VF or Higher IF
  • Fast Recovery Time
  • Military Temperature Range Available
  • Matched, Four-Diode Monolithic Array
  • High Peak Current
  • Low-Cost MINIDIP Package
  • Low-Forward Voltage
  • Parallelable for Lower VF or Higher IF
  • Fast Recovery Time
  • Military Temperature Range Available

This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on the outputs of high-speed power MOSFET drivers where Schottky diodes are needed to clamp any negative excursions caused by ringing on the driven line.These diodes are also ideally suited for use as voltage clamps when driving inductive loads such as relays and solenoids, and to provide a path for current free-wheeling in motor drive applications.The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time.This single monolithic chip is fabricated in both hermetic CERDIP and copper-eaded plastic packages. The UC1611 in ceramic is designed for -55°C to 125°C environments but with reduced peak current capability: while the UC3611 in plastic has higher current rating over a 0°C to 70°C ambient temperature range.

This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on the outputs of high-speed power MOSFET drivers where Schottky diodes are needed to clamp any negative excursions caused by ringing on the driven line.These diodes are also ideally suited for use as voltage clamps when driving inductive loads such as relays and solenoids, and to provide a path for current free-wheeling in motor drive applications.The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time.This single monolithic chip is fabricated in both hermetic CERDIP and copper-eaded plastic packages. The UC1611 in ceramic is designed for -55°C to 125°C environments but with reduced peak current capability: while the UC3611 in plastic has higher current rating over a 0°C to 70°C ambient temperature range.

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類型 標題 日期
* Data sheet Quad Schottky Diode Array datasheet (Rev. A) 2001年 5月 15日
Application note ESD Packaging and Layout Guide (Rev. B) PDF | HTML 2022年 8月 18日
User guide Generic ESD Evaluation Module User's Guide (Rev. A) PDF | HTML 2021年 9月 27日

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<p>The electrostatic-sensitive device (ESD) evaluation module (EVM) is a development platform for most of our ESD portfolio. The board comes with all traditional ESD footprints in order to test any number of devices. Devices can be soldered onto their respect footprint and then tested.</p>
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