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低壓側驅動器

UC3707

現行

具有 40-V VDD、40-ns 下降時間和輸出鎖存的 1.5-A/1.5-A 雙通道閘極驅動器

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產品規格表

UC3707

現行
產品規格表 立即訂購

產品詳細資料

Number of channels 2 Power switch IGBT, MOSFET Peak output current (A) 1.5 Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 40 Features Analog Shutdown with Optional Latch, Thermal shutdown Operating temperature range (°C) 0 to 70 Rise time (ns) 40 Fall time (ns) 40 Propagation delay time (µs) 0.1 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Driver configuration Dual
Number of channels 2 Power switch IGBT, MOSFET Peak output current (A) 1.5 Input supply voltage (min) (V) 5 Input supply voltage (max) (V) 40 Features Analog Shutdown with Optional Latch, Thermal shutdown Operating temperature range (°C) 0 to 70 Rise time (ns) 40 Fall time (ns) 40 Propagation delay time (µs) 0.1 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Driver configuration Dual
PDIP (N) 16 181.42 mm² 19.3 x 9.4 SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • Two independent Drivers
  • 1.5A Totem Pole Outputs
  • Inverting and Non-Inverting Inputs
  • 40 ns Rise and Fall into 1000 pF
  • High-Speed, Power MOSFET Compatible
  • Low Cross-Conduction Current Spike
  • Analog Shutdown with Optional Latch
  • Low Quiescent Current
  • 5 V to 40 V Operation
  • Thermal Shutdown Protection
  • 16-Pin Dual-In-Line Package
  • 20-Pin PLCC and CLCC Package
  • Two independent Drivers
  • 1.5A Totem Pole Outputs
  • Inverting and Non-Inverting Inputs
  • 40 ns Rise and Fall into 1000 pF
  • High-Speed, Power MOSFET Compatible
  • Low Cross-Conduction Current Spike
  • Analog Shutdown with Optional Latch
  • Low Quiescent Current
  • 5 V to 40 V Operation
  • Thermal Shutdown Protection
  • 16-Pin Dual-In-Line Package
  • 20-Pin PLCC and CLCC Package

The UC1707 family of power drivers is made with a high-speed Schottky process to interface between low-level control functions and high-power switching devices - particularly power MOSFETs. These devices contain two independent channels, each of which can be activated by either a high or low input logic level signal. Each output can source or sink up to 1.5 A as long as power dissipation limits are not exceeded.

Although each output can be activated independently with its own inputs, it can be forced low in common through the action either of a digital high signal at the Shutdown terminal or a differential low-level analog signal. The Shutdown command from either source can either be latching or not, depending on the status of the Latch Disable pin.

Supply voltage for both VIN and VC can independently range from 5 V to 40 V.

These devices are available in two-watt plastic "bat-wing" DIP for operation over a 0°C to 70°C temperature range and, with reduced power, in a hermetically sealed cerdip for –55°C to +125°C operation. Also available in surface mount DW, Q, L packages.

The UC1707 family of power drivers is made with a high-speed Schottky process to interface between low-level control functions and high-power switching devices - particularly power MOSFETs. These devices contain two independent channels, each of which can be activated by either a high or low input logic level signal. Each output can source or sink up to 1.5 A as long as power dissipation limits are not exceeded.

Although each output can be activated independently with its own inputs, it can be forced low in common through the action either of a digital high signal at the Shutdown terminal or a differential low-level analog signal. The Shutdown command from either source can either be latching or not, depending on the status of the Latch Disable pin.

Supply voltage for both VIN and VC can independently range from 5 V to 40 V.

These devices are available in two-watt plastic "bat-wing" DIP for operation over a 0°C to 70°C temperature range and, with reduced power, in a hermetically sealed cerdip for –55°C to +125°C operation. Also available in surface mount DW, Q, L packages.
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類型 標題 日期
* Data sheet Dual Channel Power Driver datasheet (Rev. B) 2008年 9月 16日
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
Application note U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics 1999年 9月 5日
Application note U-137 Practical Considerations in High Performance MOSFET, IGBT and MCT Gate 1999年 9月 5日

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PDIP (N) 16 檢視選項
SOIC (DW) 16 檢視選項
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