Multi-MHz GaN Power Stage Reference Design for High-Speed DC/DC Converters TIDA-01634 (ACTIVE)

Description & Features

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Key Document

Description

This reference design implements a multi-MHz power stage design based on the LMG1210 half-bridge GaN driver and GaN power High Electron Mobility Transistors (HEMTs). With highly efficient switches and flexible dead-time adjustment, this design can significantly improve power density while achieving good efficiency as well as wide control bandwidth. This power stage design can be widely applied to many space-constrained and fast response required applications such as 5G telecom power, servers, and industrial power supplies.

Features
  • Compact GaN-Based Power Stage Design With Switching up to 50 MHz
  • Independent PWM inputs for high side and low side, or single PWM input with adjustable dead time
  • Minimum pulse width of 3 ns
  • High slew rate immunity of 300 V/ns
  • Driver UVLO and overtermpertaure protection

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Schematic/Block Diagram

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Design Guide

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Design Files

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TI Devices (2)

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Part Number Name Product Family Sample & Buy Design Kits & Evaluation Modules
LMG1210  200V, 1.5A/3A Half bridge MOSFET and GaN FET driver with adjustable dead-time  Gate drivers  Sample & Buy View Design Kits & Evaluation Modules
SN74LVC2G17  Dual Schmitt-Trigger Buffer  Buffer/driver  Sample & Buy Not Available

CAD/CAE symbols

Part # Package | Pins CAD File (.bxl) STEP Model (.stp)
LMG1210 WQFN (RVR)| 19 Download -
SN74LVC2G17 Download
Download Download
Download
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Download -

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Technical Documents

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User guides (1)
Title Type Size (KB) Date
PDF 885 26 Feb 2018
Design files (6)
Title Type Size (KB) Date
ZIP 1201 26 Feb 2018
ZIP 45 26 Feb 2018
PDF 716 26 Feb 2018
PDF 136 26 Feb 2018
PDF 104 26 Feb 2018
PDF 151 26 Feb 2018

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