SBAS563E December   2011  – December 2022 ADS1113-Q1 , ADS1114-Q1 , ADS1115-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
    1.     Device Comparison Table
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements: I2C
    7. 6.7 Timing Diagram
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Noise Performance
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 Multiplexer
      2. 8.3.2 Analog Inputs
      3. 8.3.3 Full-Scale Range (FSR) and LSB Size
      4. 8.3.4 Voltage Reference
      5. 8.3.5 Oscillator
      6. 8.3.6 Output Data Rate and Conversion Time
      7. 8.3.7 Digital Comparator (ADS1114-Q1 and ADS1115-Q1 Only)
      8. 8.3.8 Conversion Ready Pin (ADS1114-Q1 and ADS1115-Q1 Only)
      9. 8.3.9 SMbus Alert Response
    4. 8.4 Device Functional Modes
      1. 8.4.1 Reset and Power-Up
      2. 8.4.2 Operating Modes
        1. 8.4.2.1 Single-Shot Mode
        2. 8.4.2.2 Continuous-Conversion Mode
      3. 8.4.3 Duty Cycling For Low Power
    5. 8.5 Programming
      1. 8.5.1 I2C Interface
        1. 8.5.1.1 I2C Address Selection
        2. 8.5.1.2 I2C General Call
        3. 8.5.1.3 I2C Speed Modes
      2. 8.5.2 Target Mode Operations
        1. 8.5.2.1 Receive Mode
        2. 8.5.2.2 Transmit Mode
      3. 8.5.3 Writing To and Reading From the Registers
      4. 8.5.4 Data Format
    6. 8.6 Register Map
      1. 8.6.1 Address Pointer Register (address = N/A) [reset = N/A]
      2. 8.6.2 Conversion Register (P[1:0] = 00b) [reset = 0000h]
      3. 8.6.3 Config Register (P[1:0] = 01b) [reset = 8583h]
      4. 8.6.4 Lo_thresh (P[1:0] = 10b) [reset = 8000h] and Hi_thresh (P[1:0] = 11b) [reset = 7FFFh] Registers
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Basic Connections
      2. 9.1.2 Single-Ended Inputs
      3. 9.1.3 Input Protection
      4. 9.1.4 Unused Inputs and Outputs
      5. 9.1.5 Analog Input Filtering
      6. 9.1.6 Connecting Multiple Devices
      7. 9.1.7 Quick-Start Guide
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Shunt Resistor Considerations
        2. 9.2.2.2 Operational Amplifier Considerations
        3. 9.2.2.3 ADC Input Common-Mode Considerations
        4. 9.2.2.4 Resistor (R1, R2, R3, R4) Considerations
        5. 9.2.2.5 Noise and Input Impedance Considerations
        6. 9.2.2.6 First-Order RC Filter Considerations
        7. 9.2.2.7 Circuit Implementation
        8. 9.2.2.8 Results Summary
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Power-Supply Sequencing
      2. 9.3.2 Power-Supply Decoupling
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.1.3 Input Protection

The ADS111x-Q1 are fabricated in a small-geometry, low-voltage process. The analog inputs feature protection diodes to the supply rails. However, the current-handling ability of these diodes is limited, and the ADS111x-Q1 can be permanently damaged by analog input voltages that exceed approximately 300 mV beyond the rails for extended periods. One way to protect against overvoltage is to place current-limiting resistors on the input lines. The ADS111x-Q1 analog inputs can withstand continuous currents as large as 10 mA.