SLUS938A December   2011  – October 2014

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Pin Configuration and Functions
  6. 6Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Electrical Characteristics: DC
    4. 6.4 Switching Characteristcs: AC
  7. 7Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 EPROM
      2. 7.3.2 EPROM Status Memory
      3. 7.3.3 Error Checking
    4. 7.4 Device Functional Modes
      1. 7.4.1  Customizing the bq2026
      2. 7.4.2  Bus Termination
      3. 7.4.3  Serial Communication
      4. 7.4.4  Initialization
      5. 7.4.5  ROM Commands
        1. 7.4.5.1 Read ROM
        2. 7.4.5.2 Match ROM
        3. 7.4.5.3 Skip ROM
      6. 7.4.6  Memory and Status Function Commands
      7. 7.4.7  Read Memory and Field CRC
      8. 7.4.8  Read Status
      9. 7.4.9  Write Memory
      10. 7.4.10 Write Status
      11. 7.4.11 SDQ Signaling
      12. 7.4.12 Reset and Presence Pulse
      13. 7.4.13 Write
      14. 7.4.14 Read
      15. 7.4.15 Program Pulse
      16. 7.4.16 Idle
      17. 7.4.17 CRC Generation
  8. 8Device and Documentation Support
    1. 8.1 Trademarks
    2. 8.2 Electrostatic Discharge Caution
    3. 8.3 Glossary
  9. 9Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
DC voltage applied to VPU See Figure 1 –0.3 12.5 V
Low-level output current, IOL 5 mA
ESD IEC 61000-4-2 Air discharge SDQ to VSS, VSS to SDQ 6 kV
Operating free-air temperature range, TA –20 70 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –55 125 °C

6.3 Electrical Characteristics: DC

At TA = –20°C to 70°C; VPU(min) = 2.65 VDC to 5.5 VDC, all voltages relative to VSS.
PARAMETER TEST CONDITION MIN TYP MAX UNIT
ISDQ Supply current VPU = 5.5 V 20 μA
VOL Low-level output voltage Logic 0, VPU = 5.5 V, IOL = 4 mA, SDQ pin 0.4 V
Logic 0, VPU = 2.65 V, IOL = 2 mA 0.4 V
VOH High-level output voltage Logic 1 VPU 5.5 V
IOL Low-level output current (sink) VOL = 0.4 V, SDQ pin 4 mA
VIL Low-level input voltage Logic 0 0.8 V
VIH High-level input voltage Logic 1 2.2 V
VPP Programming voltage 11.5 12 V
Ilkg Input leakage 1.4 µA
CI Input capacitance 1.2 nF

6.4 Switching Characteristcs: AC

TA = –20°C to 70°C; VPU(min) = 2.65 VDC to 5.5 VDC, all voltages relative to VSS
PARAMETER TEST CONDITION MIN TYP MAX UNIT
tc Bit cycle time(1) 60 120 μs
tWSTRB Write start cycle(1) 1 15 μs
tWDSU Write data setup(1) tWSTRB 15 μs
tWDH Write data hold(1)(2) 60 tc μs
trec Recovery time(1) 1 μs
tRSTRB Read start cycle(1) 1 13 μs
tODD Output data delay(1) tRSTRB 13 μs
tODHO Output data hold(1) 17 60 μs
tRST Reset time(1) 480 μs
tPPD Presence pulse delay(1) 15 64 μs
tPP Presence pulse(1) 60 240 μs
tEPROG EPROM programming time 480 μs
tPSU Program setup time 5 μs
tPREC Program recovery time 5 μs
tPRE Program rising-edge time 5 μs
tPFE Program falling-edge time 5 μs
tRSTREC 480 μs
(1) 5-kΩ series resistor between SDQ pin and VPU. (See Figure 1)
(2) tWDH must be less than tc to account for recovery.