SLUSFB5A June   2024  – April 2025 BQ41Z50

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
    1. 4.1 Pin Equivalent Diagrams
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Supply Current
    6. 5.6  Power Supply Control
    7. 5.7  Low Dropout Regulators
    8. 5.8  Internal Oscillators
    9. 5.9  Voltage References
    10. 5.10 Current Wake Detector
    11. 5.11 VC0, VC1, VC2, VC3, VC4, PACK
    12. 5.12 Cell Balancing Support
    13. 5.13 SMBD, SMBC
    14. 5.14 PRES/SHUTDN, DISP
    15. 5.15 ALERT
    16. 5.16 LEDCNTLA, LEDCNTLB, LEDCNTLC
    17. 5.17 Coulomb Counter
    18. 5.18 Coulomb Counter Digital Filter (CC1)
    19. 5.19 Current Measurement Digital Filter (CC2)
    20. 5.20 Analog-to-Digital Converter
    21. 5.21 ADC Digital Filter
    22. 5.22 CHG, DSG High-side NFET Drivers
    23. 5.23 Precharge (PCHG) FET Drive
    24. 5.24 FUSE Drive
    25. 5.25 Internal Temperature Sensor
    26. 5.26 TS1, TS2, TS3, TS4
    27. 5.27 Flash Memory
    28. 5.28 OT, SCD, OCC, OCD1, OCD2 Protection Thresholds (SCOMP)
    29. 5.29 OT, SCD, OCC, OCD1, OCD2 Protection Timing (SCOMP)
    30. 5.30 GPIO1, GPIO2, GPIO3, GPIO4, GPIO5, GPIO6, GPIO7
    31. 5.31 Elliptical Curve Cryptography (ECC)
    32. 5.32 SMBus Interface Timing
    33. 5.33 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Primary (1st Level) Safety Features
      2. 6.3.2 Secondary (2nd Level) Safety Features
      3. 6.3.3 Charge Control Features
      4. 6.3.4 Gas Gauging
      5. 6.3.5 Lifetime Data Logging Features
      6. 6.3.6 Authentication
      7. 6.3.7 Configuration
        1. 6.3.7.1 Oscillator Function
        2. 6.3.7.2 Real Time Clock
        3. 6.3.7.3 System Present Operation
        4. 6.3.7.4 Emergency Shutdown
        5. 6.3.7.5 2-Series, 3-Series, or 4-Series Cell Configuration
        6. 6.3.7.6 Cell Balancing
        7. 6.3.7.7 LED Display
      8. 6.3.8 Battery Parameter Measurements
        1. 6.3.8.1 Charge and Discharge Counting
        2. 6.3.8.2 Voltage
        3. 6.3.8.3 Current
        4. 6.3.8.4 Temperature
        5. 6.3.8.5 Communications
          1. 6.3.8.5.1 SMBus On and Off State
          2. 6.3.8.5.2 SBS Commands
    4. 6.4 Device Functional Modes
  8. 7 Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 High-Current Path
          1. 7.2.2.1.1 Protection FETs
          2. 7.2.2.1.2 Chemical Fuse
          3. 7.2.2.1.3 Lithium-Ion Cell Connections
          4. 7.2.2.1.4 Sense Resistor
          5. 7.2.2.1.5 ESD Mitigation
        2. 7.2.2.2 Gas Gauge Circuit
          1. 7.2.2.2.1 Coulomb-Counting Interface
          2. 7.2.2.2.2 Low-dropout Regulators (LDOs)
            1. 7.2.2.2.2.1 REG18
            2. 7.2.2.2.2.2 REG135
          3. 7.2.2.2.3 System Present
          4. 7.2.2.2.4 SMBus Communication
          5. 7.2.2.2.5 FUSE Circuitry
        3. 7.2.2.3 Secondary-Current Protection
          1. 7.2.2.3.1 Cell and Battery Inputs
          2. 7.2.2.3.2 External Cell Balancing
          3. 7.2.2.3.3 PACK and FET Control
          4. 7.2.2.3.4 Temperature Measurement
          5. 7.2.2.3.5 LEDs
      3. 7.2.3 Application Curves
    3. 7.3 Configuring Device Firmware
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Protector FET Bypass and Pack Terminal Bypass Capacitors
      2. 9.1.2 ESD Spark Gap
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.20 Analog-to-Digital Converter

Typical values stated where TA = 25°C and VBAT = 14.4V, Min/Max values stated where TA = –40°C to 85°C and VBAT = 3.0V to 28V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VADC_FSR Full scale range VREF = VREF1, actual input limited to VREG18 –0.2 1.666 x VREF V
VREF = VREG18, actual input limited to VREG18 –0.2 1.666 x VREF
BADC_INL (1)(4) Integral nonlinearity (when using VREF1 and differential VCn cell voltage measurement mode) Best fit over 0V to 5.5V –6.6 6.6 LSB(2)
BADC_DNL(1) Differential nonlinearity No missing codes, using differential cell voltage measurement with offset and gain compensated. ±1 LSB(2)
BADC_OFF_CELL Differential VCn offset error Using differential cell voltage mode on VCn pins –5 5 LSB(2)
BADC_OFF_DIV Divider offset error Using divider mode on BAT, VCC and PACK pins –4 0 4 LSB(3)
BADC_OFF_DRIFT_CELL(1) Differential VCn offset error drift Using differential cell voltage mode on VCn pins 0.004 0.07 LSB/°C(2)
BADC_GAIN Gain Gain measured over ideal input voltage range, differential VCn cell input mode. Measured and stored in Flash 5410 LSB/V(2)
BADC_GAIN_DRIFT(1) Gain drift Gain measured over ideal input voltage range, differential VCn cell input mode.  Drift value measured as change in gain over operating temperature range compared to gain at 30°C. –0.25 –0.025 0.25 LSB/V/°C(2)
KSCALE_FACTOR(1) Scaling Factor Post Calibration, VC1–VC0, VC2–VC1, VC3–VC2, VC4–VC3, VC4–PACK 0.198 0.2 0.202
Post Calibration, VC4–VSS, VCC–VSS, PACK–VSS 0.032 0.033 0.034
Post Calibration, TSx–VSS 0.59 0.6 0.61
RADC_IN_CELL(1) Effective input resistance Differential VCn cell input mode  when measuring 180 kΩ
ILKG VCELLn Input Leakage No active ADC measurement, no cell balancing activity. 0.5 µA
(1) Specified by characterization. Not production tested
(2) The 16-bit LSB size of the differential VCn cell voltage measurement is given by 1 LSB = 5 x VREF1 / 2N-1 ≈ 5 x 1.2 / 215 = 183µV
(3) The 16-bit LSB size of the divider voltage measurement is given by 1 LSB = 30 x (5/3) x VREF1 / 2N-1 ≈ 50 x 1.2 / 215 = 1.8mV
(4) Average effective differential input resistance with device operating in NORMAL mode, cell balancing disabled, three or more thermistors in use, and a 5V differential voltage applied.