SLUSE86A April   2022  – April 2024 BQ76922

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information BQ76922
    5. 6.5  Supply Current
    6. 6.6  Digital I/O
    7. 6.7  LD Pin
    8. 6.8  Precharge (PCHG) and Predischarge (PDSG) FET Drive
    9. 6.9  FUSE Pin Functionality
    10. 6.10 REG18 LDO
    11. 6.11 REG0 Pre-regulator
    12. 6.12 REG1 LDO
    13. 6.13 Voltage References
    14. 6.14 Coulomb Counter
    15. 6.15 Coulomb Counter Digital Filter (CC1)
    16. 6.16 Current Measurement Digital Filter (CC2)
    17. 6.17 Current Wake Detector
    18. 6.18 Analog-to-Digital Converter
    19. 6.19 Cell Balancing
    20. 6.20 Cell Open Wire Detector
    21. 6.21 Internal Temperature Sensor
    22. 6.22 Thermistor Measurement
    23. 6.23 Internal Oscillators
    24. 6.24 High-side NFET Drivers
    25. 6.25 Comparator-Based Protection Subsystem
    26. 6.26 Timing Requirements – I2C Interface, 100kHz Mode
    27. 6.27 Timing Requirements – I2C Interface, 400kHz Mode
    28. 6.28 Timing Requirements – HDQ Interface
    29. 6.29 Interface Timing Diagrams
    30. 6.30 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1  Overview
    2. 7.2  Functional Block Diagram
    3. 7.3  Diagnostics
    4. 7.4  Device Configuration
      1. 7.4.1 Commands and Subcommands
      2. 7.4.2 Configuration Using OTP or Registers
      3. 7.4.3 Device Security
      4. 7.4.4 Scratchpad Memory
    5. 7.5  Measurement Subsystem
      1. 7.5.1  Voltage Measurement
        1. 7.5.1.1 Voltage Measurement Schedule
        2. 7.5.1.2 Using VC Pins for Cells Versus Interconnect
        3. 7.5.1.3 Cell 1 Voltage Validation During SLEEP Mode
      2. 7.5.2  General Purpose ADCIN Functionality
      3. 7.5.3  Coulomb Counter and Digital Filters
      4. 7.5.4  Synchronized Voltage and Current Measurement
      5. 7.5.5  Internal Temperature Measurement
      6. 7.5.6  Thermistor Temperature Measurement
      7. 7.5.7  Factory Trim of Voltage ADC
      8. 7.5.8  Voltage Calibration (ADC Measurements)
      9. 7.5.9  Voltage Calibration (COV and CUV Protections)
      10. 7.5.10 Current Calibration
      11. 7.5.11 Temperature Calibration
    6. 7.6  Primary and Secondary Protection Subsystems
      1. 7.6.1 Protections Overview
      2. 7.6.2 Primary Protections
      3. 7.6.3 Secondary Protections
      4. 7.6.4 High-Side NFET Drivers
      5. 7.6.5 Protection FETs Configuration and Control
        1. 7.6.5.1 FET Configuration
        2. 7.6.5.2 PRECHARGE and PREDISCHARGE Modes
      6. 7.6.6 Load Detect Functionality
    7. 7.7  Device Hardware Features
      1. 7.7.1  Voltage References
      2. 7.7.2  ADC Multiplexer
      3. 7.7.3  LDOs
        1. 7.7.3.1 Preregulator Control
        2. 7.7.3.2 REG1 LDO Control
      4. 7.7.4  Standalone Versus Host Interface
      5. 7.7.5  Multifunction Pin Controls
      6. 7.7.6  RST_SHUT Pin Operation
      7. 7.7.7  CFETOFF, DFETOFF, and BOTHOFF Pin Functionality
      8. 7.7.8  ALERT Pin Operation
      9. 7.7.9  Fuse Drive
      10. 7.7.10 Cell Open Wire
      11. 7.7.11 Low Frequency Oscillator
      12. 7.7.12 High Frequency Oscillator
    8. 7.8  Device Functional Modes
      1. 7.8.1 Overview
      2. 7.8.2 NORMAL Mode
      3. 7.8.3 SLEEP Mode
      4. 7.8.4 DEEPSLEEP Mode
      5. 7.8.5 SHUTDOWN Mode
      6. 7.8.6 CONFIG_UPDATE Mode
    9. 7.9  Serial Communications Interface
      1. 7.9.1 Serial Communications Overview
      2. 7.9.2 I2C Communications
      3. 7.9.3 HDQ Communications
    10. 7.10 Cell Balancing
      1. 7.10.1 Cell Balancing Overview
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements (Example)
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Performance Plot
      4. 8.2.4 Calibration Process
    3. 8.3 Random Cell Connection Support
    4. 8.4 Startup Timing
    5. 8.5 FET Driver Turn-Off
    6. 8.6 Unused Pins
  10. 9 Power Supply Requirements
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RSN|32
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.25 Comparator-Based Protection Subsystem

Typical values stated where TA = 25°C and VBAT = 18.5 V, min/max values stated where TA = -40°C to 85°C and VBAT = 4.7 V to 27.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(OVP) Overvoltage detection range Nominal setting (50.6mV steps) 1.012V to 5.566V in 50.6mV steps V
V(OVP_ACC) Overvoltage detection voltage threshold accuracy(3) TA = +25°C, nominal setting between 1.012V and 5.566V(1) ±3 mV
TA = +25°C, nominal setting between 3.036V and 5.06V(1) –10 10 mV
TA = –10°C to +60°C, nominal setting between 1.012V and 5.566V(1) ±3 mV
TA = –10°C to +60°C, nominal setting between 3.036V and 5.06V(1) –15 15 mV
TA = –40°C to +85°C, nominal setting between 1.012V and 5.566V(1) ±5 mV
TA = –40°C to +85°C, nominal setting between 3.036V and 5.06V(1) –25 25 mV
V(OVP_DLY) Overvoltage detection delay(2) Nominal setting (3.3ms steps) 10ms to 6753ms in 3.3ms steps ms
V(UVP) Undervoltage detection range Nominal setting (50.6mV steps) 1.012V to 4.048V in 50.6mV steps V
V(UVP_ACC) Undervoltage detection voltage threshold accuracy(3) TA = +25°C, nominal setting between 1.012V and 4.048V(1) ±2.5 mV
TA = +25°C, nominal setting between 1.518V and 3.542V(1) –10 10 mV
TA = –10°C to +60°C, nominal setting between 1.012V and 4.048V(1) ±1.8 mV
TA = –10°C to +60°C, nominal setting between 1.518V and 3.542V(1) –15 15 mV
TA = –40°C to +85°C, nominal setting between 1.012V and 4.048V(1) ±1.6 mV
TA = –40°C to +85°C, nominal setting between 1.518V and 3.542V(1) –25 25 mV
V(UVP_DLY) Undervoltage detection delay(2) Nominal setting (3.3ms steps) 10 ms to 6753ms in 3.3ms steps ms
V(SCD) Short circuit in discharge voltage threshold range Nominal settings, threshold based on VSRP - VSRN –10,–20,–40,–60,–80,–100,–125,–150,–175,–200,–250,–300,–350,–400,–450,–500 mV
V(SCD_ACC) Short circuit in discharge voltage threshold detection accuracy(3) TA = –40°C to +85°C, V(SCD) settings ≤ –20mV –15 15 % of nominal threshold
TA = –40°C to +85°C, V(SCD) settings > –20mV –35 35 % of nominal threshold
V(SCD_DLY) Short circuit in discharge detection delay Fastest setting (with 3mV on VSRN – VSRP) 8 µs
Fastest setting (with 25mV on VSRN – VSRP) 600 ns
Nominal setting (15µs steps) 15µs to 450µs in 15µs steps µs
V(OCC) Overcurrent in charge (OCC) voltage threshold range Nominal settings, threshold based on VSRP – VSRN 4mV to 124mV in 2mV steps mV
V(OCD) Overcurrent in discharge (OCD1, OCD2) voltage threshold ranges Nominal settings, thresholds based on VSRP – VSRN –4mV to –200mV in 2mV steps mV
V(OC_ACC) Overcurrent (OCC, OCD1, OCD2) detection voltage threshold accuracy(3) |Setting| < 20mV –2 2.65 mV
|Setting| = 20 mV ~ 56mV –4 4 mV
|Setting| = 56 mV ~ 100mV –5 5 mV
|Setting| > 100mV –7 5 mV
V(OC_DLY) Overcurrent (OCC, OCD1, OCD2) detection delay (independent delay setting for each protection) Nominal setting (3.3ms steps) 10ms to 425ms in 3.3ms steps ms
(1) Measured by fault triggered using 100 ms detection delay.
(2) Cell balancing not active. Timing of overvoltage and undervoltage protection checks is modified when cell balancing is in progress.
(3) Specified by a combination of characterization and production test