SCHS183E November   1998  – October 2022 CD54HC374 , CD54HC574 , CD54HCT374 , CD54HCT574 , CD74HC374 , CD74HC574 , CD74HCT374 , CD74HCT574

PRODUCTION DATA  

  1. Features
  2. Description
  3. Revision History
  4. Pin Configuration and Functions
  5. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 Prerequisite for Switching Characteristics
    6. 5.6 Switching Characteristics
  6. Parameter Measurement Information
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Functional Modes
  8. Power Supply Recommendations
  9. Layout
    1. 9.1 Layout Guidelines
  10. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • J|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

PARAMETER TEST CONDITIONS(2) VCC (V) 25℃ –40℃ to 85℃ –55℃ to 125℃ UNIT
MIN TYP MAX MIN MAX MIN MAX
HC TYPES
VIH High level input voltage 2 1.5 1.5 1.5 V
4.5 3.15 3.15 3.15
6 4.2 4.2 4.2
VIL Low level input voltage 2 0.5 0.5 0.5 V
4.5 1.35 1.35 1.35
6 1.8 1.8 1.8
VOH

High level output voltage

CMOS loads

IOH = – 20 μA 2 1.9 1.9 1.9 V
IOH = – 20 μA 4.5 4.4 4.4 4.4
IOH = – 20 μA 6 5.9 5.9 5.9

High level output voltage

TTL loads

IOH = – 6 mA 4.5 3.98 3.84 3.7 V
IOH = –7.8 mA 6 5.48 5.34 5.2
VOL

Low level output voltage

CMOS loads

IOL = 20 μA 2 0.1 0.1 0.1 V
IOL = 20 μA 4.5 0.1 0.1 0.1
IOL = 20 μA 6 0.1 0.1 0.1

Low level output voltage

TTL loads

IOL = 6 mA 4.5 0.26 0.33 0.4 V
IOL = 7.8 mA 6 0.26 0.33 0.4
II Input leakage current VI = VCC or GND 6 ±0.1 ±1 ±1 μA
ICC Quiescent device current VI = VCC or GND 6 8 80 160 μA
VIL or VIH Three-state leakage current VO = VCCor GND 6 ±0.5 ±5.0 ±10 μA
HCT TYPES
VIH High level input voltage 4.5 to 5.5 2 2 2 V
VIL Low level input voltage 4.5 to 5.5 0.8 0.8 0.8 V
VOH

High level output voltage

CMOS loads

IOH = – 20 μA 4.5 4.4 4.4 4.4 V

High level output voltage

TTL loads

IOH = – 6 mA 4.5 3.98 3.84 3.7
VOL

Low level output voltage

CMOS loads

IOL = 20 μA 4.5 0.1 0.1 0.1 V

Low level output voltage

TTL loads

IOL = 6 mA 4.5 0.26 0.33 0.4
II Input leakage current VI = VCC or GND 5.5 ±0.1 ±1 ±1 μA
ICC Quiescent device current VI = VCC or GND 5.5 8 80 160 μA
VIL or VIH Three-state leakage current VO = VCCor GND 6 ±0.5 ±5.0 ±10 μA
ΔICC(1) HCT374
Additional quiescent device current per input pin
D0 - D7 inputs held at VCC – 2.1 4.5 to 5.5 100 108 135 147 μA
CP input held at VCC – 2.1 4.5 to 5.5 100 324 405 441 μA
OE input held at VCC – 2.1 4.5 to 5.5 100 468 585 637 μA
HCT574
Additional quiescent device current per input pin
D0 - D7 inputs held at VCC – 2.1 4.5 to 5.5 100 144 180 196 μA
CP input held at VCC – 2.1 4.5 to 5.5 100 270 337.5 367.5 μA
OE input held at VCC – 2.1 4.5 to 5.5 100 216 270 294 μA
For dual-supply systems, theoretical worst case (VI = 2.4 V, VCC = 5.5 V) specificationis 1.8mA.
VI = VIH or VIL, unless otherwise noted.