SCHS192C November   1998  – July 2022 CD54HC640 , CD54HCT640 , CD74HC640 , CD74HCT640

PRODUCTION DATA  

  1. 1 Features
  2. 2 Description
  3. 3 Revision History
  4. 4 Pin Configuration and Functions
  5. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 Switching Characteristics (2)
  6. 6 Parameter Measurement Information
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Device Functional Modes
  8. 8 Power Supply Recommendations
  9. 9 Layout
    1. 9.1 Layout Guidelines
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • N|20
  • DW|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Electrical Characteristics

PARAMETER TEST CONDITIONS(1) VCC (V) 25°C -40°C to 85°C -55°C to 125°C UNIT
MIN TYP MAX MIN MAX MIN MAX
HC TYPES
VIH High-level input voltage 2 1.5 1.5 1.5 V
4.5 3.15 3.15 3.15 V
6 4.2 4.2 4.2 V
VIL Low-level input voltage 2 0.5 0.5 0.5 V
4.5 1.35 1.35 1.35 V
6 1.8 1.8 1.8 V
VOH High-level output voltage

CMOS loads

 IOH = – 20 µA 2 1.9 1.9 1.9 V
IOH = – 20 µA 4.5 4.4 4.4 4.4 V
IOH = – 20 µA 6 5.9 5.9 5.9 V
High-level output voltage

TTL loads

 IOH= – 6 mA 4.5 3.98 3.84 3.7 V
IOH = – 7.8 mA 6 5.48 5.34 5.2 V
VOL Low-level output voltage

CMOS loads

 IOL = 20 µA 2 0.1 0.1 0.1 V
IOL = 20 µA 4.5 0.1 0.1 0.1 V
IOL = 20 µA 6 0.1 0.1 0.1 V
Low-level output voltage

TTL loads

 IOL= 6 mA 4.5 0.26 0.33 0.4 V
IOL = 7.8 mA 6 0.26 0.33 0.4 V
II Input leakage current VI = VCC or GND 6 ±0.1 ±1 ±1 µA
ICC Quiescent device current VI = VCC or GND 6 8 80 160 µA
IOZ Three-state leakage current VO = VCC or GND 6 ±0.5 ±5 ±10 µA
HCT TYPES
VIH High-level input voltage 4.5 to 5.5 2 2 2 V
VIL Low-level input voltage 4.5 to 5.5 0.8 0.8 0.8 V
VOH High-level output voltage

CMOS loads

 VOH = – 20 µA 4.5 4.4 4.4 4.4 V
High-level output voltage

TTL loads

 VOH = – 6 mA 4.5 3.98 3.84 3.7 V
VOL Low-level output voltage

CMOS loads

 VOL = 20 µA 4.5 0.1 0.1 0.1 V
Low-level output voltage

TTL

 VOL = 6 mA 4.5 0.26 0.33 0.4 V
II Input leakage current VI = VCC or GND 5.5 ±0.1 ±1 ±1 µA
ICC Quiescent device current VI = VCC or GND 5.5 8 80 160 µA
IOZ Three-state leakage current VO = VCC or GND 5.5 ±0.5 ±5 ±10
∆ICC(1) Additional quiescent device current per input pin DIR input held at VCC – 2.1 4.5 to 5.5 100 324 405 441 µA
OE and A inputs held at vCC – 2.1 4.5 to 5.5 100 540 675 735
B input held at VCC – 2.1 4.5 to 5.5 100 540 675 735
(1) For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA