SLPS517B December   2014  – December 2017 CSD13383F4

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Features

  • Low On-Resistance
  • Ultra Low Qg and Qgd
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Low Profile
    • 0.35 mm Height
  • Integrated ESD Protection Diode
    • Rated >2 kV HBM
    • Rated >2 kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

Applications

  • Optimized for Load Switch Applications
  • Optimized for General Purpose Switching Applications
  • Single-Cell Battery Applications
  • Handheld and Mobile Applications

Description

This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Typical Part Dimensions
CSD13383F4 top_image_SLPS447.gif

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 12 V
Qg Gate Charge Total (4.5 V) 2.0 nC
Qgd Gate Charge Gate-to-Drain 0.6 nC
RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V 53
VGS = 4.5 V 37
VGS(th) Threshold Voltage 1.0 V

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Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD13383F4 3000 7-Inch Reel Femto (0402) 1.0 mm × 0.6 mm SMD Lead Less Tape and Reel
CSD13383F4T 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 12 V
VGS Gate-to-Source Voltage ±10 V
ID Continuous Drain Current(1) 2.9 A
IDM Pulsed Drain Current(1)(2) 18.5 A
IG Continuous Gate Clamp Current 25 mA
Pulsed Gate Clamp Current(1)(2) 250
PD Power Dissipation 500 mW
ESD Rating Human Body Model (HBM) 2 kV
Charged Device Model (CDM) 2 kV
TJ,
Tstg
Operating Junction Temperature
Storage Temperature
–55 to 150 °C
EAS Avalanche Energy, single pulse ID = 6.7,
L = 0.1 mH, RG = 25 Ω
2.2 mJ
  1. Typical RθJA = 250°C/W.
  2. Pulse duration ≤100 μs, duty cycle ≤1%.
Top View
CSD13383F4 Top_View.gif

Revision History

Changes from A Revision (January 2016) to B Revision

  • Changed IDM value From: 27 A To: 18.5 A in the Absolute Maximum Ratings table.Go
  • Updated Figure 1. Go
  • Updated Figure 10 using Typ RθJA = 250°C/W. Go
  • Updated all mechanical drawings, increased the size of the pads in the Recommended Stencil Pattern section. Go

Changes from * Revision (December 2014) to A Revision