3 Description

This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Figure 3-1 Typical Part Dimensions

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	12		V
Q_g	Gate Charge Total (4.5 V)	2.0		nC
Q_gd	Gate Charge Gate-to-Drain	0.6		nC
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 2.5 V	53	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5 V	37	mΩ
V_GS(th)	Threshold Voltage	1.0		V

Ordering Information

DEVICE⁽¹⁾	QTY	MEDIA	PACKAGE	SHIP
CSD13383F4	3000	7-Inch Reel	Femto (0402) 1.0 mm × 0.6 mm SMD Lead Less	Tape and Reel
CSD13383F4T	250	7-Inch Reel	Femto (0402) 1.0 mm × 0.6 mm SMD Lead Less	Tape and Reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	12	V
V_GS	Gate-to-Source Voltage	±10	V
I_D	Continuous Drain Current⁽¹⁾	2.9	A
I_DM	Pulsed Drain Current⁽¹⁾⁽²⁾	18.5	A
I_G	Continuous Gate Clamp Current	25	mA
I_G	Pulsed Gate Clamp Current⁽¹⁾⁽²⁾	250	mA
P_D	Power Dissipation	500	mW
ESD Rating	Human Body Model (HBM)	2	kV
ESD Rating	Charged Device Model (CDM)	2	kV
T_J, T_stg	Operating Junction Temperature Storage Temperature	–55 to 150	°C
E_AS	Avalanche Energy, single pulse I_D = 6.7, L = 0.1 mH, R_G = 25 Ω	2.2	mJ

(1) Typical R_θJA = 250°C/W.

(2) Pulse duration ≤100 μs, duty cycle ≤1%.

Figure 3-2 Top View