12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection
Product details
Parameters
Features
- Low On-Resistance
- Ultra Low Qg and Qgd
- Ultra-Small Footprint (0402 Case Size)
- 1.0 mm × 0.6 mm
- Low Profile
- 0.35 mm Height
- Integrated ESD Protection Diode
- Rated >2 kV HBM
- Rated >2 kV CDM
- Lead and Halogen Free
- RoHS Compliant
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Description
This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
Technical documentation
Type | Title | Date | |
---|---|---|---|
* | Datasheet | CSD13383F4 12 V N-Channel FemtoFET™ MOSFET datasheet (Rev. B) | Dec. 12, 2017 |
Technical article | Understanding the benefits of “lead-free” power MOSFETs | Feb. 07, 2019 | |
User guide | Ultra-Small Footprint N-Channel FemtoFET™ MOSFET Test EVM | Dec. 06, 2017 | |
User guide | FemtoFET Surface Mount Guide (Rev. D) | Jul. 07, 2016 | |
Technical article | When to use load switches in place of discrete MOSFETs | Feb. 03, 2016 | |
Technical article | 48V systems: Driving power MOSFETs efficiently and robustly | Oct. 08, 2015 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.Hardware development
Description
Features
- Easy handling of these Land Grid Array (LGA) packaged parts
- Full range of Vds and package size
- Seven daughter cards can be snapped to create individual boards, with one FET per daughter card
- FemtoFETs have the best Size*Resistance in the FET industry
Description
The AMIC110 Industrial Communications Engine (ICE) is a development platform targeted at industrial communications and industrial ethernet in particular. Key to the AMIC110 ICE is the Sitara AMIC110 SoC that features Arm® Cortex™-A8 processor along with the Programmable-Realtime Unit (...)
Features
- AMIC110 SoC featuring Sitara™ Arm® Cortex®-A8 and PRU-ICSS
- 512 MByte of DDR3 and 8 MByte of SPI flash
- 2x 10/100 industrial ethernet connectors with external magnetics
- 20-pin JTAG header to support all types of external emulator
- RoHS and REACH compliant design
- EMC-compliant, industrial temp dual port (...)
Software development
Design tools & simulation
Features
- Calculates power loss for TI MOSFETs
Features
- Calculates power loss for TI MOSFETs
Reference designs
Design files
-
download EtherCAT Slave and Multi-Protocol Industrial Ethernet Assembly Drawing (Rev. A).pdf (894KB) -
download EtherCAT Slave and Multi-Protocol Industrial Ethernet BOM (Rev. A).pdf (79KB) -
download EtherCAT Slave and Multi-Protocol Industrial Ethernet CAD Files (Rev. A).zip (3037KB) -
download EtherCAT Slave and Multi-Protocol Industrial Ethernet Gerber (Rev. A).zip (6730KB) -
download EtherCAT Slave and Multi-Protocol Industrial Ethernet PCB (Rev. A).pdf (6631KB)
CAD/CAE symbols
Package | Pins | Download |
---|---|---|
(YJC) | 3 | View options |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
Recommended products may have parameters, evaluation modules or reference designs related to this TI product.
Support & training
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