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CSD13383F4

ACTIVE

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection

Product details

VDS (V) 12 VGS (V) 10 Type N-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 44 Rds(on) at VGS=2.5 V (max) (mΩ) 65 VGSTH typ (typ) (V) 1 QG (typ) (nC) 2 QGD (typ) (nC) 0.6 QGS (typ) (nC) 0.4 ID - silicon limited at TC=25°C (A) 2.9 ID - package limited (A) 2.9 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) 12 VGS (V) 10 Type N-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 44 Rds(on) at VGS=2.5 V (max) (mΩ) 65 VGSTH typ (typ) (V) 1 QG (typ) (nC) 2 QGD (typ) (nC) 0.6 QGS (typ) (nC) 0.4 ID - silicon limited at TC=25°C (A) 2.9 ID - package limited (A) 2.9 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
PICOSTAR (YJC) 3 0.657225 mm² 1.035 x 0.635
  • Low on-resistance
  • Ultra low Qg and Qgd
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Low profile
    • 0.36 mm height
  • Integrated ESD protection diode
    • Rated >2 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Low on-resistance
  • Ultra low Qg and Qgd
  • Ultra-small footprint (0402 case size)
    • 1.0 mm × 0.6 mm
  • Low profile
    • 0.36 mm height
  • Integrated ESD protection diode
    • Rated >2 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant

This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet CSD13383F4 12 V N-Channel FemtoFET™ MOSFET datasheet (Rev. C) PDF | HTML 07 Sep 2021
Application brief Estimating Leakage Currents of Power MOSFETs PDF | HTML 31 Oct 2025
Application note MOSFET Support and Training Tools (Rev. G) PDF | HTML 27 Oct 2025
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML 25 Mar 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML 18 Dec 2023
Application note Solving Assembly Issues with Chip Scale Power MOSFETs PDF | HTML 14 Dec 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
More literature WCSP Handling Guide 07 Nov 2019
Design guide FemtoFET Surface Mount Guide (Rev. D) 07 Jul 2016

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  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
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  • Assembly location

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