SLPS220D August   2009  – May 2017 CSD16321Q5

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Q5 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQH|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Features

  • Optimized for 5-V Gate Drive
  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • SON 5-mm × 6-mm Plastic Package

Applications

  • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
  • Optimized for Synchronous FET Applications

Description

This 25-V, 1.9-mΩ, 5-mm × 6-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.

Top View
CSD16321Q5 P0093-01.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 25 V
Qg Gate Charge Total (4.5 V) 14 nC
Qgd Gate Charge Gate-to-Drain 2.5 nC
RDS(on) Drain-to-Source On Resistance VGS = 3 V 2.8
VGS = 4.5 V 2.1
VGS = 8 V 1.9
VGS(th) Threshold Voltage 1.1 V

Device Information(1)

DEVICE MEDIA QTY PACKAGE SHIP
CSD16321Q5 13-Inch Reel 2500 SON
5.00-mm × 6.00-mm
Plastic Package
Tape and Reel
CSD16321Q5T 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage +10 / –8 V
ID Continuous Drain Current (Package Limited) 100 A
Continuous Drain Current (Silicon Limited), TC = 25°C 177
Continuous Drain Current(1) 29
IDM Pulsed Drain Current(2) 400 A
PD Power Dissipation(1) 3.1 W
Power Dissipation, TC = 25°C 113
TJ,
Tstg
Operating Junction,
Storage Temperature
–55 to 150 °C
EAS Avalanche Energy, Single Pulse
ID = 66 A, L = 0.1 mH, RG = 25 Ω
218 mJ
  1. Typical RθJA = 40°C/W on 1-in2, 2-oz Cu pad on 0.06-in thick FR4 PCB.
  2. Max RθJC = 1.1°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(ON) vs VGS

CSD16321Q5 D007_SLPS220B.gif

Gate Charge

CSD16321Q5 D004_SLPS220B_FP.gif