SLPS220E August 2009 – December 2023 CSD16321Q5
PRODUCTION DATA
- 1
- 1Features
- 2Applications
- 3Description
- 4Specifications
- 5Device and Documentation Support
- 6Revision History
- 7Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
- DQH|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information
3 Description
This 25V, 1.9mΩ, 5mm × 6mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.
Top ViewProduct Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V | |
| Qg | Gate Charge Total (4.5V) | 14 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 2.5 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 3V | 2.8 | mΩ |
| VGS = 4.5V | 2.1 | |||
| VGS = 8V | 1.9 | |||
| VGS(th) | Threshold Voltage | 1.1 | V | |
Device Information(1)
| DEVICE | MEDIA | QTY | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD16321Q5 | 13-Inch Reel | 2500 | SON 5.00mm × 6.00mm Plastic Package | Tape and Reel |
| CSD16321Q5T | 7-Inch Reel | 250 |
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 25 | V |
| VGS | Gate-to-Source Voltage | +10 / –8 | V |
| ID | Continuous Drain Current (Package Limited) | 100 | A |
| Continuous Drain Current (Silicon Limited), TC = 25°C | 177 | ||
| Continuous Drain Current(1) | 29 | ||
| IDM | Pulsed Drain Current(2) | 400 | A |
| PD | Power Dissipation(1) | 3.1 | W |
| Power Dissipation, TC = 25°C | 113 | ||
| TJ, Tstg | Operating Junction, Storage Temperature | –55 to 150 | °C |
| EAS | Avalanche Energy, Single
Pulse ID = 66A, L = 0.1mH, RG = 25Ω | 218 | mJ |
(1) Typical RθJA = 40°C/W on 1in2, 2oz Cu pad on 0.06in thick
FR4 PCB.
(2) Max RθJC = 1.1°C/W, pulse duration ≤ 100μs, duty cycle ≤ 1%.
RDS(ON) vs
VGS
Gate Charge