SLPS219C August   2009  – October 2023 CSD16322Q5

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Revision History
  6. 5Electrical Characteristics
  7. 6Thermal Characteristics
  8. 7Typical MOSFET Characteristics
  9. 8Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Static Characteristics
BVDSSDrain to Source VoltageVGS = 0 V, ID = 250 μA25V
IDSSDrain to Source Leakage CurrentVGS = 0 V, VDS = 20 V1μA
IGSSGate to Source Leakage CurrentVDS = 0 V, VGS = +10/–8 V100nA
VGS(th)Gate to Source Threshold VoltageVDS = VGS, ID = 250 μA0.91.11.4V
RDS(on)Drain to Source On ResistanceVGS = 3 V, ID = 20 A5.47.2mΩ
VGS = 4.5 V, ID = 20 A4.65.8mΩ
VGS = 8 V, ID = 20 A3.95mΩ
gfsTransconductanceVDS = 15 V, ID = 20 A106S
Dynamic Characteristics
CissInput CapacitanceVGS = 0 V, VDS = 12.5 V,
ƒ = 1 MHz
10501365pF
CossOutput Capacitance740950pF
CrssReverse Transfer Capacitance5570pF
RGSeries Gate Resistance1.12.2
QgGate Charge Total (4.5 V)VDS = 12.5 V,
ID = 20 A
6.89.7nC
QgdGate Charge Gate to Drain1.3nC
QgsGate Charge Gate to Source2.4nC
Qg(th)Gate Charge at Vth1.3nC
QossOutput ChargeVDS = 13 V, VGS = 0 V17nC
td(on)Turn On Delay TimeVDS = 12.5 V, VGS = 4.5 V,
ID = 20 A, RG = 2 Ω
6.1ns
trRise Time10.7ns
td(off)Turn Off Delay Time12.3ns
tfFall Time3.7ns
Diode Characteristics
VSDDiode Forward VoltageISD = 20 A, VGS = 0 V0.81V
QrrReverse Recovery ChargeVDD = 13 V, IF = 20 A, di/dt = 300 A/μs19nC
trrReverse Recovery TimeVDD = 13 V, IF = 20 A, di/dt = 300 A/μs21ns