SLPS387 Data sheet

SLPS387C January 2016 – November 2023 CSD17552Q3A

PRODUCTION DATA

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	30			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 24 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	1.1	1.5	1.9	V
R_DS(on)	Drain-to-source on resistance	V_GS = 4.5 V, I_D = 11 A		6.5	8.1	mΩ
R_DS(on)	Drain-to-source on resistance	V_GS = 10 V, I_D = 11 A		5.5	6.0	mΩ
g_fs	Transconductance	V_DS = 15 V, I_D = 11 A		106		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 15 V, ƒ = 1 MHz		1580	2050	pF
C_oss	Output capacitance			385	500	pF
C_rss	Reverse transfer capacitance			28	36	pF
R_G	Series gate resistance			.9	1.8	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 15 V, I_D = 11 A		9	12	nC
Q_gd	Gate charge gate to drain			2.3		nC
Q_gs	Gate charge gate to source			3.6		nC
Q_g(th)	Gate charge at V_th			1.8		nC
Q_oss	Output charge	V_DS = 15 V, V_GS = 0 V		11		nC
t_d(on)	Turn on delay time	V_DS = 15 V, V_GS = 4.5 V, I_DS = 11 A, R_G = 2 Ω		7.2		ns
t_r	Rise time			7.4		ns
t_d(off)	Turn off delay time			11.0		ns
t_f	Fall time			3.4		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 11 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse recovery charge	V_DS= 13.5 V, I_F = 11 A, di/dt = 300 A/μs		17		nC
t_rr	Reverse recovery time	V_DS= 13.5 V, I_F = 11 A, di/dt = 300 A/μs		15		ns