SLPS610C October   2016  – June 2022 CSD17585F5

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, IDS = 250 μA30V
IDSSDrain-to-source leakage currentVGS = 0 V, VDS = 24 V100nA
IGSSGate-to-source leakage currentVDS = 0 V, VGS = 20 V50nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = 250 μA0.91.31.7V
RDS(on)Drain-to-source on resistanceVGS = 4.5 V, IDS = 0.9 A2633mΩ
VGS = 10 V, IDS = 0.9 A2227
gfsTransconductanceVDS = 3 V, IDS = 0.9 A7S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0 V, VDS = 15 V,
ƒ = 1 MHz
292380pF
CossOutput capacitance166215pF
CrssReverse transfer capacitance5.77.4pF
RGSeries gate resistance34
QgGate charge total (4.5 V)VDS = 15 V, IDS = 0.9 A1.92.4nC
QgGate charge total (10 V)3.95.1nC
QgdGate charge gate-to-drain0.39nC
QgsGate charge gate-to-source0.53nC
Qg(th)Gate charge at Vth0.42nC
QossOutput chargeVDS = 15 V, VGS = 0 V4.1nC
td(on)Turnon delay timeVDS = 15 V, VGS = 4.5 V,
IDS = 0.9 A, RG = 2 Ω
4ns
trRise time4ns
td(off)Turnoff delay time31ns
tfFall time11ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = 0.9 A, VGS = 0 V0.741.0V