SLPS610C October   2016  – June 2022 CSD17585F5

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Description

This 30-V, 22-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

GUID-CDC7BD32-7B1C-4D6E-91D9-C7CF0C3D913F-low.gif Figure 3-1 Typical Part Dimensions

Product Summary
TA = 25°CTYPICAL VALUEUNIT
VDSDrain-to-Source Voltage30V
QgGate Charge Total (4.5 V)1.9nC
QgdGate Charge Gate-to-Drain0.39nC
RDS(on)Drain-to-Source On ResistanceVGS = 4.5 V26mΩ
VGS = 10 V22
VGS(th)Threshold Voltage1.3V

Device Information
DEVICE(1)QTYMEDIAPACKAGESHIP
CSD17585F530007-Inch ReelFemto
1.53-mm × 0.77-mm
SMD Lead Less
Tape and Reel
CSD17585F5T250
For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°CVALUEUNIT
VDSDrain-to-Source Voltage30V
VGSGate-to-Source Voltage+20V
IDContinuous Drain Current(1)3.6A
Continuous Drain Current(2)5.9
IDMPulsed Drain Current(1)(3)34A
PDPower Dissipation(1)0.5W
Power Dissipation(2)1.4
V(ESD)Human-Body Model (HBM)4kV
Charged-Device Model (CDM)2
TJ,
Tstg
Operating Junction,
Storage Temperature
–55 to 150°C
Min Cu, typical RθJA = 245°C/W.
Max Cu, typical RθJA = 90°C/W.
Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
GUID-5B55C675-AC0E-4D38-BF2A-6AC1E56A7CDE-low.gif Figure 3-2 Top View