SLPS638C November   2016  – June 2024 CSD18510KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.3 Typical MOSFET Characteristics

TA =25°C (unless otherwise stated)

CSD18510KTT Transient Thermal ImpedanceFigure 4-1 Transient Thermal Impedance
CSD18510KTT Saturation CharacteristicsFigure 4-2 Saturation Characteristics
CSD18510KTT Gate Charge
VDS = 20V ID = 100A
Figure 4-4 Gate Charge
CSD18510KTT Threshold Voltage vs Temperature
ID = 250µA
Figure 4-6 Threshold Voltage vs Temperature
CSD18510KTT Normalized On-State Resistance vs Temperature
ID = 100A
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD18510KTT Maximum Safe Operating Area
Single pulse, max RθJC = 0.6°C/W
Figure 4-10 Maximum Safe Operating Area
CSD18510KTT Maximum Drain Current vs Temperature
Max RθJC = 0.6°C/W
Figure 4-12 Maximum Drain Current vs Temperature
CSD18510KTT Transfer Characteristics
VDS = 5V
Figure 4-3 Transfer Characteristics
CSD18510KTT CapacitanceFigure 4-5 Capacitance
CSD18510KTT On-State Resistance vs Gate-to-Source VoltageFigure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD18510KTT Typical Diode Forward VoltageFigure 4-9 Typical Diode Forward Voltage
CSD18510KTT Single Pulse Unclamped Inductive SwitchingFigure 4-11 Single Pulse Unclamped Inductive Switching