SLPS638C November   2016  – June 2024 CSD18510KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Revision History

Changes from Revision B (November 2022) to Revision C (June 2024)

  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo

Changes from Revision A (January 2017) to Revision B (November 2022)

Changes from Revision * (November 2016) to Revision A (January 2017)

  • Changed silicon current limit, TC = 25°C from 237A : to 274A in the Absolute Maximum Ratings tableGo
  • Changed silicon current limit, TC = 100°C from 167A : to 193A in the Absolute Maximum Ratings tableGo
  • Changed max power dissipation from 188W : to 250W in the Absolute Maximum Ratings tableGo
  • Changed the charge values in the Dynamic Characteristics section of the Electrical Characteristics tableGo
  • Changed max RθJC from 0.8°C/W : to 0.6°C/W in the Thermal Information tableGo
  • Changed Figure 4-4 in the Typical MOSFET Characteristics section to reflect updated gate chargesGo