SLPS548 July   2017 CSD18511KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)

Features

  • Low Qg and Qgd
  • Low RDS(ON)
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • TO-220 Plastic Package

Applications

  • Secondary Side Synchronous Rectifier
  • Motor Control

Description

This 40-V, 2.1-mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD18511KCS FET_Pins.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 40 V
Qg Gate Charge Total (10 V) 63.9 nC
Qgd Gate Charge Gate-to-Drain 9.7 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 3.2
VGS = 10 V 2.1
VGS(th) Threshold Voltage 1.8 V

Device Information(1)

DEVICE MEDIA QTY PACKAGE SHIP
CSD18511KCS Tube 50 TO-220
Plastic Package
Tube
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 40 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 110 A
Continuous Drain Current (Silicon Limited), TC = 25°C 194
Continuous Drain Current (Silicon Limited), TC = 100°C 137
IDM Pulsed Drain Current(1) 400 A
PD Power Dissipation 188 W
TJ,
Tstg
Operating Junction,
Storage Temperature
–55 to 175 °C
EAS Avalanche Energy, Single Pulse
ID = 56 A, L = 0.1 mH, RG = 25 Ω
156 mJ
  1. Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD18511KCS D007_SLPS684.gif

Gate Charge

CSD18511KCS D004_SLPS684_FP.gif