SLPS548A July 2017 – March 2024 CSD18511KCS
PRODUCTION DATA
- 1
- 1Features
- 2Applications
- 3Description
- 4Specifications
- 5Device and Documentation Support
- 6Revision History
- 7Mechanical, Packaging, and Orderable Information
Package Options
Refer to the PDF data sheet for device specific package drawings
Mechanical Data (Package|Pins)
- KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information
3 Description
This 40V, 2.1mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 40 | V | |
| Qg | Gate Charge Total (10V) | 63.9 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 9.7 | nC | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 4.5V | 3.2 | mΩ |
| VGS = 10V | 2.1 | |||
| VGS(th) | Threshold Voltage | 1.8 | V | |
Device Information(1)
| DEVICE | MEDIA | QTY | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD18511KCS | Tube | 50 | TO-220 Plastic Package | Tube |
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 40 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current (Package Limited) | 110 | A |
| Continuous Drain Current (Silicon Limited), TC = 25°C | 194 | ||
| Continuous Drain Current (Silicon Limited), TC = 100°C | 137 | ||
| IDM | Pulsed Drain Current(1) | 400 | A |
| PD | Power Dissipation | 188 | W |
| TJ, Tstg | Operating Junction, Storage Temperature | –55 to 175 | °C |
| EAS | Avalanche Energy, Single
Pulse ID = 56A, L = 0.1mH, RG = 25Ω | 156 | mJ |
(1) Max RθJC = 0.8°C/W, pulse duration ≤ 100μs, duty cycle ≤ 1%.
RDS(on) vs VGS |
Gate
Charge |