SLPS548A July   2017  – March 2024 CSD18511KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Receiving Notification of Documentation Updates
    3. 5.3 Support Resources
    4. 5.4 Trademarks
    5. 5.5 Electrostatic Discharge Caution
    6. 5.6 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0V, ID = 250μA40V
IDSSDrain-to-source leakage currentVGS = 0V, VDS = 32V1μA
IGSSGate-to-source leakage currentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, ID = 250μA1.51.82.4V
RDS(on)Drain-to-source on-resistanceVGS = 4.5V, ID = 100A3.24.2mΩ
VGS = 10V, ID = 100A2.12.6
gfsTransconductanceVDS = 4V, ID = 100A249S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0V, VDS = 20V, ƒ = 1MHz45705940pF
CossOutput capacitance454591pF
CrssReverse transfer capacitance235306pF
RGSeries gate resistance0.91.8Ω
QgGate charge total (4.5V)VDS = 20V, ID = 100A31nC
QgGate charge total (10V)64nC
QgdGate charge gate-to-drain9.7nC
QgsGate charge gate-to-source17.9nC
Qg(th)Gate charge at Vth7.4nC
QossOutput chargeVDS = 20V, VGS = 0V20.7nC
td(on)Turnon delay timeVDS = 20V, VGS = 10V,
IDS = 100A, RG = 0Ω		8ns
trRise time6ns
td(off)Turnoff delay time17ns
tfFall time3ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = 100A, VGS = 0V0.91.0V
QrrReverse recovery chargeVDS= 20V, IF = 100A,
di/dt = 300A/μs		62nC
trrReverse recovery time31ns