SLPS624A December   2016  – March 2019 CSD18512Q5B

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Top View
      1.      Device Images
        1.       RDS(on) vs VGS
        2.       Gate Charge
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5B Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q5B Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 40 V, 1.3 mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View

CSD18512Q5B P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain to source voltage 40 V
Qg Gate charge total (10 V) 75 nC
Qgd Gate charge gate to drain 13.3 nC
RDS(on) Drain to source on resistance VGS = 4.5 V 1.8 mΩ
VGS = 10 V 1.3 mΩ
VGS(th) Threshold voltage 1.6 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD18512Q5B 2500 13-Inch Reel SON 5 mm × 6 mm Plastic Package Tape and Reel
CSD18512Q5BT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the datasheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain to source voltage 40 V
VGS Gate to source voltage ±20 V
ID Continuous drain current (package limited) 100 A
Continuous drain current (silicon limited),
TC = 25°C		 211
Continuous drain current(1) 32
IDM Pulsed drain current(2) 400 A
PD Power dissipation(1) 3.1 W
Power dissipation, TC = 25°C 139
TJ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 150 °C
EAS Avalanche energy, single pulse
ID = 64 A, L = 0.1 mH, RG = 25 Ω		 205 mJ
  1. Typical RθJA = 40°C/W on a 1 inch2 , 2 oz. Cu pad on a 0.06 inch thick FR4 PCB.
  2. Max RθJC = 0.9°C/W, pulse duration ≤100 μs, duty cycle ≤1%