Product details

VDS (V) 40 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 2.3 Rds(on) max at VGS=10 V (mOhms) 1.6 IDM - pulsed drain current (Max) (A) 400 QG typ (nC) 75 QGD typ (nC) 13.3 Package (mm) SON5x6 VGS (V) 20 VGSTH typ (V) 1.6 ID - silicon limited at Tc=25degC (A) 211 ID - package limited (A) 100 Logic level Yes
VDS (V) 40 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 2.3 Rds(on) max at VGS=10 V (mOhms) 1.6 IDM - pulsed drain current (Max) (A) 400 QG typ (nC) 75 QGD typ (nC) 13.3 Package (mm) SON5x6 VGS (V) 20 VGSTH typ (V) 1.6 ID - silicon limited at Tc=25degC (A) 211 ID - package limited (A) 100 Logic level Yes
  • Low RDS(ON)
  • Low thermal resistance
  • Avalanche rated
  • Logic level
  • Pb-free terminal plating
  • RoHS compliant
  • Halogen-free
  • SON 5 mm × 6 mm plastic package
  • Low RDS(ON)
  • Low thermal resistance
  • Avalanche rated
  • Logic level
  • Pb-free terminal plating
  • RoHS compliant
  • Halogen-free
  • SON 5 mm × 6 mm plastic package

This 40 V, 1.3 mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 40 V, 1.3 mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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Technical documentation

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Type Title Date
* Data sheet CSD18512Q5B 40 V N-channel NexFET™ power MOSFET datasheet (Rev. A) 15 Mar 2019
Technical article Understanding the benefits of “lead-free” power MOSFETs 08 Feb 2019
Application note QFN and SON PCB Attachment (Rev. B) 24 Aug 2018
Technical article When to use load switches in place of discrete MOSFETs 03 Feb 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly 08 Oct 2015
Application note Ringing Reduction Techniques for NexFET High Performance MOSFETs 16 Nov 2011

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

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The DRV8106H-Q1EVM is designed to evaluate the DRV8106H-Q1, which is an integrated, automotive qualified brushed DC motor driver. The DRV8106H-Q1 is a highly integrated half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive (...)

Evaluation board

DRV8106S-Q1EVM — Automotive half-bridge smart gate driver EVM with wide common mode current sense amplifier

The DRV8106S-Q1EVM is designed to evaluate the DRV8106S-Q1, which is an integrated, automotive qualified brushed DC motor driver. The DRV8106S-Q1 is a highly integrated half-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive (...)

Evaluation board

DRV8705H-Q1EVM — Automotive H-bridge smart gate driver EVM with low-side current sense amplifier

The DRV8705H-Q1EVM is designed to evaluate the DRV8705H-Q1, which is an integrated, automotive qualified brushed DC motor driver. The DRV8705H-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive (...)

Evaluation board

DRV8705S-Q1EVM — Automotive H-bridge smart gate driver EVM with low-side current sense amplifier

The DRV8705S-Q1EVM is designed to evaluate the DRV8705H-Q1, which is an integrated, automotive qualified brushed DC motor driver. The DRV8705S-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive (...)

Evaluation board

DRV8706H-Q1EVM — Automotive half-bridge smart gate driver evaluation module with wide common mode current sense amp

The DRV8706H-Q1EVM is designed to evaluate the DRV8706H-Q1, which is an integrated, automotive qualified brushed DC motor driver.  The DRV8706H-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive (...)

Evaluation board

DRV8706S-Q1EVM — Automotive H-bridge smart gate driver EVM with wide common mode current sense amplifier

The DRV8706S-Q1EVM is designed to evaluate the DRV8706S-Q1, which is an integrated, automotive qualified brushed DC motor driver. The DRV8706S-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive (...)

Support software

Power Loss Calculation Tool for Load Switch

SLPC019.ZIP (338 KB)
Simulation model

CSD18512Q5B PSpice Model (Rev. B)

SLPM328B.ZIP (4 KB) - PSpice Model
Calculation tool

MOTOR-DRIVE-FET-LOSS-CALC — MOSFET power loss calculator for motor drive applications

This is an Excel-based MOSFET power loss calculator for brushless DC motor drive applications.
Calculation tool

NONSYNC-BOOST-FET-LOSS-CALC — Power loss calculation tool for non-synchronous boost converter

MOSFET power loss calculator for non-synchronous boost converter
Calculation tool

SYNC-BOOST-FET-LOSS-CALC — Power loss calculation tool for synchronous boost converter

MOSFET power loss calculator for synchronous boost converter applications.
Calculation tool

SYNC-BUCK-FET-LOSS-CALC — MOSFET power loss calculator for synchronous buck converter applications

Quickly trade off size, cost and performance to select the optimal MOSFET based on application conditions.
Calculation tool

SYNC-RECT-FET-LOSS-CALC — Power loss calculation tool for synchronous rectifier

MOSFET power loss calculator for synchronous rectifier applications
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  • Ongoing reliability monitoring

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