SLPS589A March   2016  – June 2025 CSD18535KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4.   Description
  5. 3Specifications
    1. 3.1 Electrical Characteristics
    2. 3.2 Thermal Information
    3. 3.3 Typical MOSFET Characteristics
  6. 4Device and Documentation Support
    1. 4.1 Third-Party Products Disclaimer
    2. 4.2 Receiving Notification of Documentation Updates
    3. 4.3 Support Resources
    4. 4.4 Trademarks
    5. 4.5 Electrostatic Discharge Caution
    6. 4.6 Glossary
  7. 5Revision History
  8. 6Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

CSD18535KTT Transient Thermal Impedance
Figure 3-1 Transient Thermal Impedance
CSD18535KTT Saturation Characteristics
Figure 3-2 Saturation Characteristics
CSD18535KTT Transfer Characteristics
VDS = 5V
Figure 3-3 Transfer Characteristics
CSD18535KTT Gate Charge
VDS = 30VID = 100A
Figure 3-4 Gate Charge
CSD18535KTT Threshold Voltage vs Temperature
ID = 250µA
Figure 3-6 Threshold Voltage vs Temperature
CSD18535KTT Normalized On-State Resistance vs Temperature
ID = 100A
Figure 3-8 Normalized On-State Resistance vs Temperature
CSD18535KTT Maximum Safe Operating Area
Single Pulse, Max RθJC = 0.5°C/W
Figure 3-10 Maximum Safe Operating Area
CSD18535KTT Maximum Drain Current vs Temperature
Figure 3-12 Maximum Drain Current vs Temperature
CSD18535KTT Capacitance
Figure 3-5 Capacitance
CSD18535KTT On-State Resistance vs Gate-to-Source Voltage
Figure 3-7 On-State Resistance vs Gate-to-Source Voltage
CSD18535KTT Typical Diode Forward Voltage
Figure 3-9 Typical Diode Forward Voltage
CSD18535KTT Single Pulse Unclamped Inductive Switching
Figure 3-11 Single Pulse Unclamped Inductive Switching