SLPS586A March   2016  – June 2025 CSD19506KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4.   Description
  5. 3Specifications
    1. 3.1 Electrical Characteristics
    2. 3.2 Thermal Information
    3. 3.3 Typical MOSFET Characteristics
  6. 4Device and Documentation Support
    1. 4.1 Third-Party Products Disclaimer
    2. 4.2 Documentation Support
      1. 4.2.1 Related Documentation
    3. 4.3 Receiving Notification of Documentation Updates
    4. 4.4 Support Resources
    5. 4.5 Trademarks
    6. 4.6 Electrostatic Discharge Caution
    7. 4.7 Glossary
  7. 5Revision History
  8. 6Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

CSD19506KTT Transient Thermal Impedance
Figure 3-1 Transient Thermal Impedance
CSD19506KTT Saturation Characteristics
Figure 3-2 Saturation Characteristics
CSD19506KTT Transfer Characteristics
VDS = 5V
Figure 3-3 Transfer Characteristics
CSD19506KTT Gate Charge
VDS = 40VID = 100A
Figure 3-4 Gate Charge
CSD19506KTT Threshold Voltage vs Temperature
ID = 250µA
Figure 3-6 Threshold Voltage vs Temperature
CSD19506KTT Normalized On-State Resistance vs Temperature
ID = 60A
Figure 3-8 Normalized On-State Resistance vs Temperature
CSD19506KTT Maximum Safe Operating Area
Single Pulse, Max RθJC = 0.4°C/W
Figure 3-10 Maximum Safe Operating Area
CSD19506KTT Maximum Drain Current vs Temperature
Figure 3-12 Maximum Drain Current vs Temperature
CSD19506KTT Capacitance
Figure 3-5 Capacitance
CSD19506KTT On-State Resistance vs Gate-To-Source Voltage
Figure 3-7 On-State Resistance vs Gate-To-Source Voltage
CSD19506KTT Typical Diode Forward Voltage
Figure 3-9 Typical Diode Forward Voltage
CSD19506KTT Single Pulse Unclamped Inductive Switching
Figure 3-11 Single Pulse Unclamped Inductive Switching