SLPS586A March   2016  – June 2025 CSD19506KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4.   Description
  5. 3Specifications
    1. 3.1 Electrical Characteristics
    2. 3.2 Thermal Information
    3. 3.3 Typical MOSFET Characteristics
  6. 4Device and Documentation Support
    1. 4.1 Third-Party Products Disclaimer
    2. 4.2 Documentation Support
      1. 4.2.1 Related Documentation
    3. 4.3 Receiving Notification of Documentation Updates
    4. 4.4 Support Resources
    5. 4.5 Trademarks
    6. 4.6 Electrostatic Discharge Caution
    7. 4.7 Glossary
  7. 5Revision History
  8. 6Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Abstract

This 80V, 2.0mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD19506KTT
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 80 V
Qg Gate Charge Total (10V) 120 nC
Qgd Gate Charge Gate to Drain 20 nC
RDS(on) Drain-to-Source On Resistance VGS = 6V 2.2 mΩ
VGS = 10V 2.0 mΩ
VGS(th) Threshold Voltage 2.5 V
Ordering Information(1)
DEVICEQTYMEDIAPACKAGESHIP
CSD19506KTT50013-Inch ReelD2PAK Plastic PackageTape & Reel
CSD19506KTTT50
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°CVALUEUNIT
VDSDrain-to-Source Voltage80V
VGSGate-to-Source Voltage±20V
IDContinuous Drain Current (Package limited)200A
Continuous Drain Current (Silicon limited), TC = 25°C291
Continuous Drain Current (Silicon limited), TC = 100°C206
IDMPulsed Drain Current (1)400A
PDPower Dissipation375W
TJ,
Tstg		Operating Junction and
Storage Temperature Range		–55 to 175°C
EASAvalanche Energy, single pulse
ID = 129A, L = 0.1mH, RG = 25Ω		832mJ
(1) Max RθJC = 0.4°C/W, pulse duration ≤100μs, duty cycle ≤1%
CSD19506KTT RDS(on) vs VGS RDS(on) vs VGS
CSD19506KTT Gate Charge Gate Charge