SLPS407D September   2013  – May 2024 CSD19531KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0V, ID = 250μA100V
IDSSDrain-to-source leakage currentVGS = 0V, VDS = 80V1μA
IGSSGate-to-source leakage currentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, ID = 250μA2.22.73.3V
RDS(on)Drain-to-source on resistanceVGS = 6V, ID = 60A7.38.8mΩ
VGS = 10V, ID = 60A6.47.7
gfsTransconductanceVDS = 10V, ID = 60A137S
DYNAMIC CHARACTERISTICS
CissInput capacitanceVGS = 0V, VDS = 50V, ƒ = 1MHz29803870pF
CossOutput capacitance560728pF
CrssReverse transfer capacitance1317pF
RGSeries gate resistance1.32.6Ω
QgGate charge total (10V)VDS = 50V, ID = 60A3849nC
QgdGate charge gate-to-drain7.5nC
QgsGate charge gate-to-source11.9nC
Qg(th)Gate charge at Vth7.3nC
QossOutput chargeVDS = 50V, VGS = 0V98nC
td(on)Turnon delay timeVDS = 50V, VGS = 10V,
IDS = 60A, RG = 0Ω		8.4ns
trRise Time7.2ns
td(off)Turnoff delay time16ns
tfFall time4.1ns
DIODE CHARACTERISTICS
VSDDiode forward voltageISD = 60A, VGS = 0V0.91V
QrrReverse recovery chargeVDS= 50V, IF = 60A,
di/dt = 300A/μs		270nC
trrReverse recovery time83ns