SLPS407D September 2013 – May 2024 CSD19531KCS
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
This 100V, 6.4mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 100 | V | |
| Qg | Gate Charge Total (10V) | 37 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 7.5 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 6V | 7.3 | mΩ |
| VGS = 10V | 6.4 | |||
| VGS(th) | Threshold Voltage | 2.7 | V | |
| DEVICE | PACKAGE | MEDIA | QTY | SHIP |
|---|---|---|---|---|
| CSD19531KCS | TO-220 Plastic Package | Tube | 50 | Tube |
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 100 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current (Package Limited) | 100 | A |
| Continuous Drain Current (Silicon Limited), TC = 25°C | 110 | ||
| Continuous Drain Current (Silicon Limited), TC = 100°C | 78 | ||
| IDM | Pulsed Drain Current(1) | 285 | A |
| PD | Power Dissipation | 214 | W |
| TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 175 | °C |
| EAS | Avalanche Energy, Single Pulse ID = 60A, L = 0.1mH, RG = 25Ω |
180 | mJ |
RDS(on) vs VGS |
Gate
Charge |