SLPS553A October   2015  – June 2025 CSD19532KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

CSD19532KTT Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD19532KTT Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD19532KTT Transfer Characteristics
VDS = 5V
Figure 4-3 Transfer Characteristics
CSD19532KTT Gate Charge
VDS = 50VID = 90A
Figure 4-4 Gate Charge
CSD19532KTT Threshold Voltage vs Temperature
ID = 250µA
Figure 4-6 Threshold Voltage vs Temperature
CSD19532KTT Normalized On-State Resistance vs Temperature
ID = 90A
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD19532KTT Maximum Safe Operating Area
Single Pulse, Max RθJC = 0.6°C/W
Figure 4-10 Maximum Safe Operating Area
CSD19532KTT Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD19532KTT Capacitance
Figure 4-5 Capacitance
CSD19532KTT On-State Resistance vs Gate-to-Source Voltage
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD19532KTT Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD19532KTT Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching