SLPS539B March   2015  – January 2017 CSD19535KTT

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KTT Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness)

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KTT|2
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

2 Applications

  • Hot Swap
  • Motor Control
  • Secondary Side Synchronous Rectifier

3 Description

This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

.

Pin Out
CSD19535KTT FET_Pins.gif

.

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10 V) 75 nC
Qgd Gate Charge Gate-to-Drain 11 nC
RDS(on) Drain-to-Source On Resistance VGS = 6 V 3.2 mΩ
VGS = 10 V 2.8
VGS(th) Threshold Voltage 2.7 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD19535KTT 500 13-Inch Reel D2PAK Plastic Package Tape and Reel
CSD19535KTTT 50
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 200 A
Continuous Drain Current (Silicon Limited),
TC = 25°C		 197
Continuous Drain Current (Silicon Limited),
TC = 100°C		 139
IDM Pulsed Drain Current(1) 400 A
PD Power Dissipation, TC = 25°C 300 W
TJ,
Tstg 		Operating Junction,
Storage Temperature 		–55 to 175 °C
EAS Avalanche Energy, Single Pulse
ID = 95 A, L = 0.1 mH		 451 mJ
  1. Max RθJC = 0.5°C/W, pulse duration ≤ 100 µs, duty cycle ≤ 1%.

.

RDS(on) vs VGS

CSD19535KTT D007_SLPS539.gif

Gate Charge

CSD19535KTT D004_SLPS539_FP.gif