SLPS539C September   2014  – May 2025 CSD19535KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Receiving Notification of Documentation Updates
    3. 5.3 Support Resources
    4. 5.4 Trademarks
    5. 5.5 Electrostatic Discharge Caution
    6. 5.6 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 100V, 2.8mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD19535KTT Pin Out Pin Out

Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10V) 75 nC
Qgd Gate Charge Gate-to-Drain 11 nC
RDS(on) Drain-to-Source On Resistance VGS = 6V 3.2 mΩ
VGS = 10V 2.8
VGS(th) Threshold Voltage 2.7 V
Device Information(1)
DEVICE QTY MEDIA PACKAGE SHIP
CSD19535KTT 500 13-Inch Reel D2PAK Plastic Package Tape and Reel
CSD19535KTTT 50
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 200 A
Continuous Drain Current (Silicon Limited),
TC = 25°C		 197
Continuous Drain Current (Silicon Limited),
TC = 100°C		 139
IDM Pulsed Drain Current(1) 400 A
PD Power Dissipation, TC = 25°C 300 W
TJ,
Tstg		 Operating Junction,
Storage Temperature		 –55 to 175 °C
EAS Avalanche Energy, Single Pulse
ID = 95A, L = 0.1mH		 451 mJ
(1) Max RθJC = 0.5°C/W, pulse duration ≤ 100µs, duty cycle ≤ 1%.

CSD19535KTT RDS(on) vs VGS RDS(on) vs VGS
CSD19535KTT Gate Charge Gate Charge