SLPS539B March   2015  – January 2017 CSD19535KTT

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KTT Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness)

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KTT|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Specifications

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 100 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 80 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 2.2 2.7 3.4 V
RDS(on) Drain-to-source on resistance VGS = 6 V, ID = 100 A 3.2 4.1
VGS = 10 V, ID = 100 A 2.8 3.4
gfs Transconductance VDS = 10 V, ID = 100 A 301 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 50 V, ƒ = 1 MHz 6100 7930 pF
Coss Output capacitance 1160 1510 pF
Crss Reverse transfer capacitance 29 38 pF
RG Series gate resistance 1.4 2.8 Ω
Qg Gate charge total (10 V) VDS = 50 V, ID = 100 A 75 98 nC
Qgd Gate charge gate-to-drain 11 nC
Qgs Gate charge gate-to-source 25 nC
Qg(th) Gate charge at Vth 16 nC
Qoss Output charge VDS = 50 V, VGS = 0 V 210 nC
td(on) Turnon delay time VDS = 50 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω
9 ns
tr Rise time 18 ns
td(off) Turnoff delay time 21 ns
tf Fall time 15 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 100 A, VGS = 0 V 0.9 1.1 V
Qrr Reverse recovery charge VDS= 50 V, IF = 100 A,
di/dt = 300 A/μs
435 nC
trr Reverse recovery time 85 ns

Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case thermal resistance 0.5 °C/W
RθJA Junction-to-ambient thermal resistance 62 °C/W

Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD19535KTT D001_SLPS539.png
Figure 1. Transient Thermal Impedance
CSD19535KTT D002_SLPS539.gif
Figure 2. Saturation Characteristics
CSD19535KTT D003_SLPS539.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD19535KTT D004_SLPS539.gif
VDS = 50 V ID = 100 A
Figure 4. Gate Charge
CSD19535KTT D006_SLPS539_r2.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD19535KTT D008_SLPS539.gif
ID = 100 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD19535KTT D010_SLPS539.gif
Single pulse, max RθJC = 0.5°C/W
Figure 10. Maximum Safe Operating Area
CSD19535KTT D012_SLPS539_r2.gif
Figure 12. Maximum Drain Current vs Temperature
CSD19535KTT D005_SLPS539_r2.gif
Figure 5. Capacitance
CSD19535KTT D007_SLPS539.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD19535KTT D009_SLPS539.gif
Figure 9. Typical Diode Forward Voltage
CSD19535KTT D011_SLPS539.gif
Figure 11. Single Pulse Unclamped Inductive Switching