SLPS549A August 2015 – May 2016 CSD19537Q3
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 100 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 80 V | 1 | μA | |||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 2.6 | 3 | 3.6 | V | |
RDS(on) | Drain-to-source on-resistance | VGS = 6 V, ID = 10 A | 13.8 | 16.6 | mΩ | ||
VGS = 10 V, ID = 10 A | 12.1 | 14.5 | mΩ | ||||
gfs | Transconductance | VDS = 10 V, ID = 10 A | 45 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0 V, VDS = 50 V, ƒ = 1 MHz | 1290 | 1680 | pF | ||
Coss | Output capacitance | 251 | 326 | pF | |||
Crss | Reverse transfer capacitance | 13.3 | 17.3 | pF | |||
RG | Series gate resistance | 1.2 | 2.4 | Ω | |||
Qg | Gate charge total (10 V) | VDS = 50 V, ID = 10 A | 16 | 21 | nC | ||
Qgd | Gate charge gate-to-drain | 2.9 | nC | ||||
Qgs | Gate charge gate-to-source | 5.5 | nC | ||||
Qg(th) | Gate charge at Vth | 3.8 | nC | ||||
Qoss | Output charge | VDS = 50 V, VGS = 0 V | 44 | nC | |||
td(on) | Turn on delay time | VDS = 50 V, VGS = 10 V, IDS = 10 A, RG = 0 Ω |
5 | ns | |||
tr | Rise time | 3 | ns | ||||
td(off) | Turn off delay time | 10 | ns | ||||
tf | Fall time | 3 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = 10 A, VGS = 0 V | 0.8 | 1 | V | ||
Qrr | Reverse recovery charge | VDS= 50 V, IF = 10 A, di/dt = 300 A/μs |
134 | nC | |||
trr | Reverse recovery time | 36 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-case thermal resistance(1) | 1.5 | °C/W | ||
RθJA | Junction-to-ambient thermal resistance(1)(2) | 55 | °C/W |
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Max RθJA = 55°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. |
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Max RθJA = 160°C/W when mounted on a minimum pad area of 2-oz (0.071-mm) thick Cu. |
ID = 10 A | VDS = 50 V | ||
ID = 250 µA | ||
ID = 10 A | ||
Single Pulse, Max RθJC = 1.5°C/W | ||