SLPS533A December   2014  – August 2016 CSD23203W

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD23203W Package Dimensions
    2. 7.2 Land Pattern Recommendation
    3. 7.3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZC|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = –250 μA –8 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = –6.4 V –1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = –6 V –100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = –250 μA -0.6 –0.8 –1.1 V
RDS(on) Drain-to-source on-resistance VGS = –1.8 V, ID = –1.5 A 35 53 mΩ
VGS = –2.5 V, ID = –1.5 A 22 26.5 mΩ
VGS = –4.5 V, ID = –1.5 A 16.2 19.4 mΩ
gƒs Transconductance VDS = –0.8 V, ID = –1.5 A 14 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = –4 V, ƒ = 1 MHz 703 914 pF
COSS Output capacitance 391 508 pF
CRSS Reverse transfer capacitance 133 172 pF
Qg Gate charge total (–4.5 V) VDS = –4 V, ID = –1.5 A 4.9 6.3 nC
Qgd Gate charge gate-to-drain 0.6 nC
Qgs Gate charge gate-to-source 1.3 nC
Qg(th) Gate charge at Vth 0.6 nC
QOSS Output charge VDS = –4 V, VGS = 0 V 1.9 nC
td(on) Turnon delay time VDS = –4 V, VGS = –4.5 V, ID = –1.5 A
RG = 10 Ω		 14 ns
tr Rise time 12 ns
td(off) Turnoff delay time 58 ns
tƒ Fall time 27 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IS = –1.5 A, VGS = 0 V –0.75 –1 V
Qrr Reverse recovery charge VDS= –4.7 V, IF = –1.5 A
di/dt = 100 A/μs		 6.1 nC
trr Reverse recovery time 21 ns

5.2 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJA Junction-to-ambient thermal resistance(1) 170 °C/W
Junction-to-ambient thermal resistance(2) 55
(1) Device mounted on FR4 material with minimum Cu mounting area.
(2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
CSD23203W m0155-01_lps210.gif
Typ RθJA = 55°C/W when mounted on
1 in2 of 2-oz Cu.
CSD23203W m0156-01_lps210.gif
Typ RθJA = 170°C/W when mounted on minimum pad area of
2-oz Cu.

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD23203W D001_SLPS533_r2.png
Figure 1. Transient Thermal Impedance

SPACE

CSD23203W D002_SLPS533_r2.gif
Figure 2. Saturation Characteristics
CSD23203W D004_SLPS533.gif
ID = –1.5 A VDS = –4 V
Figure 4. Gate Charge
CSD23203W D006_SLPS533_r2.gif
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
CSD23203W D008_SLPS533.gif
ID = –1.5 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD23203W D010_SLPS533_r2.gif
Single Pulse, Typical RθJA = 170°C/W
Figure 10. Maximum Safe Operating Area
CSD23203W D003_SLPS533_r2.gif
VDS = –5 V
Figure 3. Transfer Characteristics
CSD23203W D005_SLPS533.gif
Figure 5. Capacitance
CSD23203W D007_SLPS533_r2.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD23203W D009_SLPS533.gif
Figure 9. Typical Diode Forward Voltage
CSD23203W D011_SLPS533_r2.gif
Figure 11. Maximum Drain Current vs Temperature