SLPS450G October   2013  – January 2022 CSD23381F4

PRODUCTION DATA  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD23381F4 Embossed Carrier Tape Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 150 mΩ, 12 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-source voltage –12 V
Qg Gate charge total (–4.5 V) 1140 pC
Qgd Gate charge gate-to-drain 190 pC
RDS(on) Drain-to-source on-resistance VGS = –1.8 V 480 mΩ
VGS = –2.5 V 250 mΩ
VGS = –4.5 V 150 mΩ
VGS(th) Threshold voltage –0.95 V
Ordering Information
Device(1) Qty Media Package Ship
CSD23381F4 3000 7-inch reel Femto(0402)
1.0-mm × 0.6-mm
Land Grid Array (LGA)		 Tape and reel
CSD23381F4T 250
(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-source voltage –12 V
VGS Gate-to-source voltage –8 V
ID Continuous drain current(1) –2.3 A
IDM Pulsed drain current(2) –9 A
IG Continuous gate clamp current –35 mA
Pulsed gate clamp current(2) –350
PD Power dissipation(1) 500 mW
V(ESD) Human body model (HBM) 4 kV
Charged device model (CDM) 2 kV
TJ,
Tstg		 Operating junction and
storage temperature range		 –55 to 150 °C
(1) Typical RθJA = 85°C/W on 1-inch2 (6.45 cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52 mm) thick FR4 PCB.
(2) Pulse duration ≤ 300 μs, duty cycle ≤ 2%
Typical Device Dimensions
Top View